The effects of dielectric overcoating on electromigration in aluminum interconnections

Spitzer, S. M.; Schwartz, S.

doi:10.1109/t-ed.1969.16755

Cited by 55 publications

(5 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, because of the screening effects of the free electrons in metals, it is believed that direct force on the ions by an electric field is insignificant compared with wind force, which results in ion migration in the direction of the electron flow toward the anode. This theoretical interpretation of the EM driving force is supported well by experimental EM observations of most metals in bulk and thin films. − However, it is also noted that there are several other reports indicating the ion migration in the direction opposite to electron flow and toward the cathode, especially in the case of Ag conductive lines. − Such controversial EM behaviors in Ag lines, which can only be explained by direct force instead of wind force, are of particular interest to PEs because Ag is one of the main ink materials used in conductive line patterning.…”

Section: Introductionsupporting

confidence: 59%

Electromigration Reliability in Ag Lines Printed with Nanoparticle Inks: Implications for Printed Electronics

Jepiti

Yoon

Kim

2022

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Despite the appealing technical advantages of printed electronic (PE) technologies, there are very few studies on their technical maturity. Conductive materials are the primary substances used in PEs; therefore, electromigration (EM) is an important reliability aspect of printed conductive patterns. The inevitable porous nature of the printed lines is derived from the nanoparticle-dispersed inks and is a major concern for the EM reliability. Electromigration has been identified as the primary failure mode of interconnect lines used in semiconductor-integrated circuits. Electromigration is a high-current-density-induced mass transport phenomenon that manifests as voids, hillocks, and/or open circuits because of momentum exchange between the conduction electrons and host metal atoms in an external electric field. High temperature and current density accelerate damage, thereby increasing line resistance and reducing circuit lifetime. This study involves investigation of the EM characteristics of Ag lines patterned by using the electrohydrodynamic (EHD) printing technique based on the resistometric and Black theoretical models. It was observed that ion migration was directed toward the cathode for EHD-printed Ag lines, indicating that the electric field−ion interactions (direct force) dominated over the momentum transfer by the electron−ion interactions (wind force). The activation energy for EM in the EHD-printed lines indicates that the surface diffusion is critical to EM failure mechanism. This study is a pioneering work on characterizing the EM performance of the EHD-printed Ag lines and the EM failure mechanism.

show abstract

Section: Introductionsupporting

confidence: 59%

Electromigration Reliability in Ag Lines Printed with Nanoparticle Inks: Implications for Printed Electronics

Jepiti

Yoon

Kim

2022

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…It has been reported that passivated films with an aluminium thickness greater than 0.6 µm have no effect on electromigration [11]. Therefore, the Mg-containing Al-Si alloys described in this paper were sputtered to a thickness of 0.5 µm onto CVD SiO 2 using a planar magnetron sputtering system [8].…”

Section: Methodsmentioning

confidence: 99%

Effects of native oxide coating on electromigration in Mg-containing Al-Si alloys

Akiya

Yamato

Furusawa

1999

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…It was subsequently realized that additional benefits could accrue from these coatings. These benefits include reduced effects of ion motion on the surface (273,275,280), lower susceptibility to metal corrosion (215,275), decreased susceptibility of metal stripes to electromigration failure (31,297,32,81), improved stability and reliability of thin-film resistors (144,342,234), and alkali-gettering capability in the case of phosphosilicate glasses (PSG). Anodic A12Os has also been reported to reduce susceptibility of A1 metallization to electromigration (180,77,178,263,81).…”

Section: Table II Stress In Low-temperature Deposited Passivation Lay...mentioning

confidence: 99%

Passivation Coatings on Silicon Devices

Schnable

Kern

Comizzoli

1975

J. Electrochem. Soc.

View full text Add to dashboard Cite

Passivation coatings are widely used to improve the performance and reliability of silicon devices of various types, ranging from discrete mesa‐type diodes and transistors to complex planar silicon integrated circuits, and including both hermetic and plastic‐encapsulated devices. This paper reviews the materials and techniques used to apply passivation coatings to completed silicon devices. Principal production techniques used in passivation of silicon devices include thermal oxidation, high‐temperature diffusion, high‐temperature chemical vapor deposition of Si3N4 or Al2O3 , low‐temperature chemical vapor deposition of glasslike SiO2 or phosphosilicate layers (deposited at approximately 400°C), rf sputtering of SiO2 , mechanical deposition of glass frit layers which are subsequently fused, and application of organic polymer films.The effects of passivation layers on silicon device reliability are discussed, and the interrelationships among the silicon device, the passivation layer or layers used and the final encapsulation are indicated. Pertinent references on passivation and on related topics are cited in the text.

show abstract

The effects of dielectric overcoating on electromigration in aluminum interconnections

Cited by 55 publications

References 5 publications

Electromigration Reliability in Ag Lines Printed with Nanoparticle Inks: Implications for Printed Electronics

Electromigration Reliability in Ag Lines Printed with Nanoparticle Inks: Implications for Printed Electronics

Effects of native oxide coating on electromigration in Mg-containing Al-Si alloys

Passivation Coatings on Silicon Devices

Contact Info

Product

Resources

About