The effects of carrier trapping in semiconductor gamma-ray spectrometers

Trammell, Rex C.; Walter, F. J.

doi:10.1016/0029-554x(69)90034-2

Cited by 85 publications

(11 citation statements)

References 5 publications

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“…However, while eqn. (6) can be used to calculate the width ∆E c , the shape of the pulse height distribution can only be realistically evaluated by following the approach of Trammell and Walter (1969) in which the individual pulse heights in infinitesimal slices through the detector are summed over the detector thickness. For low trapping, the summed pulse height distribution will be …”

Section: Spectral Broadening In Radiation Detection Systemsmentioning

confidence: 99%

Semiconductor materials and radiation detection

Owens

2006

J Synchrotron Radiat

124

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While Si and Ge have become detection standards for X-and gamma-ray spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by one or more of their physical limitations; namely the need for ancillary cooling systems or bulky cryogenics, their modest stopping powers and radiation intolerance. Wide band gap compounds offer the ability to operate in a range of chemical, thermal and radiation environments, whilst still maintaining sub-keV spectral resolution at X-ray wavelengths. In addition, these materials encompass such a wide range of physical properties that it is technically feasible to engineer materials to specific applications. However, while compound materials are used routinely in the optical and infrared wavebands, their development at hard X-and gamma-ray wavelengths has been plagued by material and fabrication problems. In this paper we present an overview of suitable materials and review the current progress in producing X-and gamma-ray radiation detectors.

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Section: Spectral Broadening In Radiation Detection Systemsmentioning

confidence: 99%

Semiconductor materials and radiation detection

Owens

2006

J Synchrotron Radiat

124

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“…In diode S24-7.7 (Fig. 5) all copper and oxygen related peaks (1)(2)(3)(4) are clearly visible. Two further peaks 5-and 6 have not been identifed.…”

Section: Resultsmentioning

confidence: 91%

Deep Level Transient Spectroscopy of High-Purity Germanium Diodes/Detectors

Häller¹,

Li²,

Hubbard³

et al. 1979

IEEE Trans. Nucl. Sci.

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Deep Level Transient Spectroscopy (DLTS) 5 has been applied for the first time to high-purity germanium p-i-n diodes. Using the correlator technique, 6 a large number of peaks due to acceptor levels in the forbidden band have been observed. The levels due to substitutional copper, to copper-hydrogen complexes and to divacancy-hydrogen defects have been positively identified. Several unknown levels have been discovered. The results obtained with DLTS are in excellent agreement with results from Hall-effect measurements. DLTS is the perfect tool to follow the creation and annealing of radiation defects.

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“…The values of the I ph -is higher than the I ph + because the electron collection efficiency is bigger than a hole collection efficiency. According to Hecht function [2] dependence of charge collection efficiency on voltage (U) is defined by dependence of drift length on electric field intensity. Product of electron drift mobility μ n by their lifetime τ n is more than corresponding product of μ p ·τ p for holes at the same electric fields.…”

Section: Resultsmentioning

confidence: 99%