The Effects of Axial Stress on CIGS Solar Cell Performance

García, Arturo Bustos; Kim, Han Sung

doi:10.1109/pvsc40753.2019.8981250

Cited by 1 publication

(3 citation statements)

References 3 publications

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“…Salari et al [12] observed that tensile stress is beneficial to improve the performance of organic solar cells. Moreover, as mentioned earlier, Garcia et al [4] observed that the performance of CIGS solar cells was improved by applying tensile stress.…”

Section: Effect Of Layer Thickness On the Internal Stress Caused By C...mentioning

confidence: 69%

“…Based on Salari et al [11] and Garcia et al [4], reducing PI layer thickness less than 17 μm can improve the performance of CIGS solar cells by nullifying the compressive residual stress in the CIGS absorber layer. Because of the fact that: 1) The thermal coefficients of CIGS and Mo are close to each other (5.9 and 7.9 E10 −6 K −1 ), compared to that of PI layer (12E10 −6 K −1 ) and 2) The thickness of the PI layer is significantly larger than those of CIGS and Mo combined, CIGS and Mo layers behave similarly competing against the PI layer.…”

Section: Effect Of Layer Thickness On the Internal Stress Caused By C...mentioning

confidence: 99%

“…Residual stress of the CIGS layer is strongly related to the thickness of the Mo contact layer. Garcia et al [4] experimentally found that some tensile stress is advantageous for increasing the short circuit current of CIGS solar cells by nullifying the compressive residual stress of active layers induced during the fabrication process. Hotspots caused by partial shading can increase the temperature of the solar cells radically, causing damage to the cells [5] [6] [7].…”

Section: Introductionmentioning

confidence: 99%

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Effects of Layer Thickness on the Residual Stresses of CIGS Solar Cells with Polyimide Substrate

Kim¹,

Xu²

2022

AMPC

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In this paper, we investigate the effect of layer thickness on the residual stresses of copper indium gallium diselenide (CIGS) solar cells with polyimide substrate caused by CIGS layer deposition at 400˚C and then cooling down to room temperature using the Finite Element Method (FEM). Moreover, we also examined the effect of layer thickness on residual stress of CIGS solar cells after cooling down to room temperature from the hotspot temperatures of 200˚C, 300˚C, and 400˚C. Our simulated CIGS is composed of five layers: ZnO, CdS, CIGS, Mo, and PI substrate. We were able to quantify the effect of each layer's thickness and hotspot temperature on the average stresses of each layer for the CIGS solar cells. We found that the PI substrate layer has the most significant effect on the residual stress of CIGS solar cells. Our simulation results reveal that the stress type (tensile vs. compressive) and the magnitude of stress of the CIGS layer (main absorber layer) can be controlled by changing the thickness of the PI substrate while applying a heat to CIGS solar cells. Quantitative analysis of relationship between layer thickness and thermo-mechanical stress of thin film solar cells can help solar cell manufacturers design more robust and reliable solar cells. For example, fabricating PI layer thickness less than 17 μm can improve the performance of CIGS solar cells by nullifying the compressive residual stress in the CIGS absorber layer.

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Section: Effect Of Layer Thickness On the Internal Stress Caused By C...mentioning

confidence: 69%

Section: Effect Of Layer Thickness On the Internal Stress Caused By C...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of Layer Thickness on the Residual Stresses of CIGS Solar Cells with Polyimide Substrate

Kim¹,

Xu²

2022

AMPC

Self Cite

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The Effects of Axial Stress on CIGS Solar Cell Performance

Cited by 1 publication

References 3 publications

Effects of Layer Thickness on the Residual Stresses of CIGS Solar Cells with Polyimide Substrate

Effects of Layer Thickness on the Residual Stresses of CIGS Solar Cells with Polyimide Substrate

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