The effects of annealing on the AC electrical properties of cobalt phthalocyanine thin films

Shihub, S.I.; Gould, R.D.; Gravano, S.

doi:10.1016/0921-4526(95)00892-6

Cited by 24 publications

(15 citation statements)

References 27 publications

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“…The value for activation energy of charge carriers calculated at TϽ180 K falls within the range of 14 -25 meV, thereby providing further evidences for the existence of a hopping type conduction mechanism. Although, this value is somewhat higher than the activation energy value of 12 meV for thin films of PbPc, 14 20 At temperatures above 210 K a transition on the conduction mechanism occurs. Activation energy values obtained from this region vary from 160 to 50 meV.…”

Section: Ac Conductivity As a Function Of Temperaturementioning

confidence: 55%

“…Similar observations have been reported for thin films of CoPc. 20 The observed increase of capacitance with temperature, and the subsequent decrease with frequency, may be qualitatively explained by the equivalent circuit model developed by Goswami and Goswami 27 for ZnS films employing ohmic contacts. According to this model the measured capacitance (C S ) is given by…”

Section: Capacitance As a Function Of Frequency And Temperaturementioning

confidence: 99%

“…[19][20][21] However, Ray et al 14 have reported a nearly quadratic dependence of conductivity on frequency ͑1 MHz͒ for partially monoclinic films of PbPc. In the latter study, experimental results were attributed to the metal/semiconductor contact rather than the bulk properties of PbPc.…”

Section: ͑4͒mentioning

confidence: 99%

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Alternating current conduction properties of thermally evaporated α-nickel phthalocyanine thin films: Effects of oxygen doping and thermal annealing

Anthopoulos

Shafai

2003

Journal of Applied Physics

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The ac conduction properties of thermally evaporated films of ␣-nickel phthalocyanine ͑␣-NiPc͒ were studied in situ and ex situ employing symmetric gold ohmic electrodes in the frequency range of 20Ϫ10 6 Hz at various temperature regimes. ac conductivity was identified to be via a hopping-type mechanism in the lower temperature region and via a free-band conduction in the high temperature region. Upon exposure of the films to dry air, the low frequency ac conductivity was found to increase by 2 orders of magnitude, which was attributed to oxygen absorption within NiPc. The doping effect was partially reversed by thermal annealing of the films under high vacuum. Measurements on the dependence of capacitance and loss tangent (tan␦) on frequency were consistent and quantitatively explained by invoking an equivalent circuit model. Oxygen doping was found to increase the low frequency capacitance of NiPc. The phenomenon was understood in terms of reduction in the value of device internal resistance induced by oxygen absorption.

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Section: Ac Conductivity As a Function Of Temperaturementioning

confidence: 55%

Section: Capacitance As a Function Of Frequency And Temperaturementioning

confidence: 99%

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Alternating current conduction properties of thermally evaporated α-nickel phthalocyanine thin films: Effects of oxygen doping and thermal annealing

Anthopoulos

Shafai

2003

Journal of Applied Physics

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“…electric field at the metal insulator interface varies with the insulator over the region. AC conductivity and dielectric measurements of metal phthalocyanine were the subject of several investigations in the last decades [5][6][7][8][9][10][11]. The data were analyzed within the frame of the 'universal' power law ∝ ω s .…”

Section: Introductionmentioning

confidence: 99%

AC conductivity and dielectric measurements of bulk magnesium phthalocyanine (MgPc)

Atta

2009

Journal of Alloys and Compounds

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“…Root mean square (RMS) roughness was calculated at 6.37 and 20.8 nm before and after annealing, respectively. Almost threefold increase of RMS roughness is probably caused by the presence of oxygen during the annealing process [17,18].…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Skonieczny

Popielarski

Bała

et al. 2016

Materials Science-Poland

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The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm −1 to 1900 cm −1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

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The effects of annealing on the AC electrical properties of cobalt phthalocyanine thin films

Cited by 24 publications

References 27 publications

Alternating current conduction properties of thermally evaporated α-nickel phthalocyanine thin films: Effects of oxygen doping and thermal annealing

Alternating current conduction properties of thermally evaporated α-nickel phthalocyanine thin films: Effects of oxygen doping and thermal annealing

AC conductivity and dielectric measurements of bulk magnesium phthalocyanine (MgPc)

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

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