The Effects of Absorption and Recombination on Quantum Dot Multijunction Solar Cell Efficiency

Walker, Alexandre W.; Theriault, Olivier; Wheeldon, Jeffrey F.; Hinzer, Karin

doi:10.1109/jphotov.2013.2257920

Cited by 29 publications

(21 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…One such triple junction device, namely, AlInGaP/GaAs/Ge embedded with quantum dots in the middle cell, resulted in 22% efficiency and increased J sc of 280 mA/cm 2 tested under varying temperature and intensity. Another InGaP/InGaAs/Ge multi‐junction device with an InAs quantum dot and wetting layer in the middle subcell resulted in 29.1% efficiency and 14.15 mA/cm 2 current density . According to the most recent confirmed result, the inverted InGaP/GaAs/InGaAs triple‐junction device resulted in an efficiency of 37.7% under 1 sun and 43.5% under 300 suns .…”

Section: Introductionmentioning

confidence: 95%

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell

Sathya

Rajasekar

2017

Int. J. Energy Res.

View full text Add to dashboard Cite

Summary A novel multi‐junction GaP/InP/Si solar cells with improved p++AlGaAs/n++ AlGaAs tunnel junction model is designed using the Synopsys/RSoft/Solar cell utility software. The optical and electrical simulations of this cell are performed using the 2D full‐wave and solar cell utility, resulting in an open circuit voltage of 3.02 V, short circuit current density of 15.942 mA/cm2, fill factor of 82.7%, and power conversion efficiency of 44.23%. Then, an optimization study of a function of variation in thickness of different layers is performed. Simulation results of the optimized structure under AM 1.5G condition showed a small improvement in the short circuit current density by 0.38%, efficiency by 0.375%, whereas the fill factor and open circuit voltage are maintained the same. The proposed multi‐junction solar cell has reported the highest power conversion efficiency of 44.397% among the III–V triple junction solar cells designed already. Copyright © 2017 John Wiley & Sons, Ltd.

show abstract

Section: Introductionmentioning

confidence: 95%

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell

Sathya

Rajasekar

2017

Int. J. Energy Res.

View full text Add to dashboard Cite

show abstract

“…4-junction GaInP/Al 0.05 Ga 0.95 As/InGaAsN/Ge solar cells A 4-junction device model for concentrator applications has been developed, based in part on previous 3-junction modelling work [8,9], and incorporating a dilute nitride subcell. We calculate the coupling factor as described previously.…”

Section: A Single-junction Ingaasn Solar Cellsmentioning

confidence: 99%

Effects of luminescent coupling in single- and 4-junction dilute nitride solar cells

Wilkins

Gabr

Trojnar

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

Self Cite

View full text Add to dashboard Cite

A novel method for incorporating the effects of luminescent coupling and photon recycling in numerical simulations of planar devices is described.The carrier generation is incorporated directly in the device simulator as an additional term in the continuity equation, so that no additional iterations are required. The method is applied to single-and four-junction solar cells containing ~1.0 eV dilute nitride material. We find that luminescent coupling increases the shortcircuit current ሺ ሻ of the 1-junction dilute nitride cell by 2.4% due to coupling with the Al 0.05 Ga 0.95 As filter. In the 4-junction design, there is significant photon recycling within the GaAs and GaInP sub-cells, providing a 60 mV increase in open-circuit voltage. There is a 1.9% relative increase in calculated efficiency to 44.4%.

show abstract

“…The tunnel junctions are modeled based on [19,20]. Details on the numerical modeling environment and its applications to 3J can be found elsewhere [7,19,20,22,23].…”

Section: Numerical Modelmentioning

confidence: 99%

Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe₂Bottom Subcell

Walker

Bouchard

Trojnar

et al. 2014

International Journal of Photoenergy

View full text Add to dashboard Cite

A new triple-junction solar cell (3J) design exploiting the highly absorptive I–III–VI chalcopyrite CuInSe2material is proposed as an alternative to III–V semiconductor 3J solar cells. The proposed structure consists of GaInP (1.9 eV)/Ga(In)As (1.4 eV)/CuInSe2(1 eV) which can be grown on a GaAs substrate in an inverted manner using epitaxial lift-off techniques. To lattice-match epitaxial CuInSe2to Ga(In)As, a compositionally graded buffer region composed of GaxIn1−xP is used. The modeling and simulation of the device include the effects of threading dislocations on minority carrier lifetimes in the metamorphic buffer and bottom subcell active region. Studies focus on device performance under standard testing conditions and concentrated illumination. The results are compared to a reference lattice mismatched 3J composed of GaInP (1.9 eV)/Ga(In)As (1.4 eV)/GaInAs (1 eV) and to a lattice matched 3J composed of GaInP (1.9 eV)/Ga(In)As (1.4 eV)/Ge (0.67 eV). The advantage of CuInSe2is its higher absorption coefficient, which requires only 1 μm of active material compared to 4 μm of GaInAs in the bottom subcell of the reference lattice mismatched cell. The proposed design reaches an efficiency of 32.6% under 1 sun illumination at 300 K with 105 cm−2threading dislocations and 39.6% at 750 suns.

show abstract

The Effects of Absorption and Recombination on Quantum Dot Multijunction Solar Cell Efficiency

Cited by 29 publications

References 41 publications

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell

Effects of luminescent coupling in single- and 4-junction dilute nitride solar cells

Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe₂Bottom Subcell

Contact Info

Product

Resources

About

The Effects of Absorption and Recombination on Quantum Dot Multijunction Solar Cell Efficiency

Cited by 29 publications

References 41 publications

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell

Effects of luminescent coupling in single- and 4-junction dilute nitride solar cells

Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe2Bottom Subcell

Contact Info

Product

Resources

About

Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe₂Bottom Subcell