The Effectiveness of Ta Prepared by Ion‐Assisted Deposition as a Diffusion Barrier Between Copper and Silicon

Kang, Byoung Sun; Lee, Sung Man; Kwak, Joon Seop; Yoon, Dong Soo; Baik, Hong Koo

doi:10.1149/1.1837684

Cited by 32 publications

(8 citation statements)

References 1 publication

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“…The increasing use of Cu for metallization pads in integrated circuit devices and the requirement for a reliable diffusion barrier inhibiting Cu from interacting with Si of the semiconductor chip, led to an investigation of Ta as a diffusion barrier and to increased interest in the study of the Cu-Ta interface system [1][2][3][4] . An atomicscale understanding of structure and stability of thin-film heterophase metal interfaces between face-centered cubic (fcc) Cu and body-centered cubic (bcc) Ta are vital for further development and design of such microelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of thermodynamical and mechanical stabilities of thin copper film on tantalum

2007

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The adhesion, stability, and wetting behavior at interfaces between thin Cu films and clean Ta (110) substrates are investigated by first-principles calculations using density functional theory (DFT) in the local-density approximation. Interfaces between pseudomorphic body-centered-tetragonal thin films of Cu, strained face-centered-cubic thin films of Cu, and a single pseudomorphic monolayer of Cu on body-centered-cubic Ta (110) surfaces are studied. Various high-symmetry interface configurations are considered for each case. The mechanical stability of the interfaces is studied by the ideal work of separation, while the thermodynamic stability is investigated by Gibbs' excess interface energy. All three interfaces are found to be thermodynamically unstable. An energy-weighting scheme extends the use of the DFT calculations to the case of an incoherent misfitting interface. The incoherent monolayer of Cu on Ta is thereby found to be thermodynamically stable. For coverages by more than a monolayer, the Cu atoms are expected to form three-dimensional islands on top of the Cu monolayer. With respect to interface separation, the monolayer is found to be bound more strongly to the Ta substrate than the thin film. Hence, failure is expected to occur not at the Cu/Ta interface but inside the Cu

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Section: Introductionmentioning

confidence: 99%

First-principles study of thermodynamical and mechanical stabilities of thin copper film on tantalum

2007

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“…The reaction between silicon and tantalum is known to require quite high temperatures (650 °C) [7], enabling a reasonable stable Si/Ta interface. Hence, it is not suprising that tantalum and its compounds have been suggested by number of authors as feasible diffusion barriers in copper based metallisation schemes [8][9][10][11][12][13][14]. Despite the amount of publications on the Ta as a diffusion barrier, information about the interfacial reactions in the Si/Ta/Cu system is still inadequate.…”

Section: Introductionmentioning

confidence: 99%

Chemical stability of Ta diffusion barrier between Cu and Si

Laurila¹,

Zeng²,

Kivilahti³

et al. 2000

Thin Solid Films

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“…It has been demonstrated that a concurrent ion bombardment during deposition resulted in the dense microstructure, in particular, in grain boundaries. 15) Microstructural defects such as grain boundaries and voids would be the preferential pathway for Li diffusion in a Fe layer. Therefore, the suppressed Li insertion/extraction reaction in samples with Fe film deposited by IBAD as illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

Effects of Fe layer on Li insertion/extraction Reactions of Fe/Si Multilayer thin Film Anodes for Lithium Rechargeable Batteries

Kim¹,

Kim²,

Ahn³

et al. 2011

J. Electrochem. Sci. Technol

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The influences of the thickness and microstructure of Fe layer on the electrochemical performances of Fe/Si multilayer thin film anodes were investigated. The Fe/Si multilayer films were prepared by electron beam evaporation, in which Fe layer was deposited with/without simultaneous bombardment of Ar ion. The kinetics of Li insertion/extraction reactions in the early stage are slowed down with increasing the thickness of Fe layer, but such a slowdown seems to be negligible for thin Fe layers less than about 500 Å. When the Fe layer was deposited with ion bombardment, even the 300 Å thick Fe layer significantly suppress Li diffusion through the Fe layer. This is attributed to the dense microstructure of Fe layer, induced by ion beam assisted deposition (IBAD). It appears that the Fe/Si multilayer films prepared with IBAD show good cyclability compared to the film deposited without IBAD.

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The Effectiveness of Ta Prepared by Ion‐Assisted Deposition as a Diffusion Barrier Between Copper and Silicon

Cited by 32 publications

References 1 publication

First-principles study of thermodynamical and mechanical stabilities of thin copper film on tantalum

First-principles study of thermodynamical and mechanical stabilities of thin copper film on tantalum

Chemical stability of Ta diffusion barrier between Cu and Si

Effects of Fe layer on Li insertion/extraction Reactions of Fe/Si Multilayer thin Film Anodes for Lithium Rechargeable Batteries

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