The effect of ultrathin ALD films on the oxidation kinetics of SiC in high-temperature steam

Hoskins, Amanda L.; Gossett, Tyler A.; Musgrave, Charles B.; Weimer, Alan W.

doi:10.1016/j.ces.2019.02.044

Cited by 5 publications

(1 citation statement)

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“…Another study performed in wet environment indicated that the oxidation rate is increased by presence of water vapour according to its quantity. 127,128 Sputtering.-Sputtering is a process of deposition in which microscopic particles are extracted from the surface of a material and bombarded by high pressure gas onto the substrate in an empty space. 129 It is another physical means of depositing ZrO 2 thin films.…”

Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented. The SiC material, which is mostly employed as a base component in metal oxide semiconductor field effect transistors is very promising for its high voltage, high power, high temperature, and high breakdown field properties, features which have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs and identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiC/silicon dioxide (SiO2). Reliability as a significant aspect of electronic structures was also discussed with emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

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Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%