The effect of transition-metal seeding powder on deposition and growth of diamond synthesized by hot filament chemical vapor deposition processes on cemented carbide substrates and its characterization

Behera, M.; Jena, Ayashkanta; Pattnaik, Sisira Kanta; Padhi, Sachidananda; Sarangi, Saroj Kumar

doi:10.1016/j.matchemphys.2020.123638

Cited by 8 publications

(4 citation statements)

References 57 publications

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“…Surtronic S128 Talysurf (Taylor Hobson, UK) measured surface roughness after pre-treatment [ 27 ]. After each operation, the mean surface roughness ( R a ), average peak to valley height ( R z ), and maximum roughness ( R max ) were measured.…”

Section: Experimental Procedures and Conditionsmentioning

confidence: 99%

Synthesis of diamond crystal growth on tungsten carbide inserts by HFCVD using various seeding powders

et al. 2022

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The hot filament chemical vapor deposition (HFCVD) process is used to synthesize diamond crystals on cemented carbide (WC–Co) SPUN inserts. Diamond (Dia.), carbon (GC-glassy spherical form), iridium (Ir), molybdenum (Mo), palladium (Pd), platinum (Pt), tungsten (W), and tantalum (Ta) powders were used as seeding materials for crystal growth. Scanning electron microscopy (SEM) data revealed the development of a few diamond crystals in platinum, iridium, and tungsten powders. The seeding with carbon, tantalum, and diamond powders formed clustered microcrystalline diamond (MCD) crystals, although other powders produced discrete crystals. Tantalum and diamond-seeded powders produced the most significant number and size of crystals. According to micro-Raman spectroscopy (µ-RS), tantalum powder had the lowest I D / I G ratio and the most excellent sp 3 bonding. X-ray diffraction (XRD) revealed the maximum diamond intensity in the (111) plane. According to atomic force microscopy (AFM), diamond and molybdenum powders had the largest grains, whereas tantalum powder had the smallest root mean square roughness value with a homogeneous grain distribution. The Vickers microhardness (VHN) test confirmed the highest hardness value for diamond and tantalum seeded powder coatings with the least amount of radial cracking. Field emission scanning electron microscopy (FESEM) revealed that both powders had higher film thickness values.

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Section: Experimental Procedures and Conditionsmentioning

confidence: 99%

Synthesis of diamond crystal growth on tungsten carbide inserts by HFCVD using various seeding powders

et al. 2022

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“…Studies on carbon films are being published routinely in various journals, and a few recently published studies discuss some exciting insights. 13–28 When deposited at different thicknesses, the nanometer-thick carbon films do not have the same characteristics. 29…”

Section: Introductionmentioning

confidence: 99%

“…Studies on carbon films are being published routinely in various journals, and a few recently published studies discuss some exciting insights. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] When deposited at different thicknesses, the nanometer-thick carbon films do not have the same characteristics. 29 Carbon films rich in diamond were deposited on uniquely treated substrates.…”

Section: Introductionmentioning

confidence: 99%

Structural analyses of carbon films deposited at different total mass rates in a hot-filament CVD system

Ali

2023

Mater. Adv.

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“…[ 1 , 2 ]. This makes them suitable for processing high-strength materials such as nonferrous metals and their alloys, special graphite, fiber, or ceramic-reinforced composites [ 3 , 4 , 5 ]. However, a graphite phase is formed at the interface due to the strong catalytic effect of the bonding phase of Co in the cemented carbide substrate [ 6 ], and thermal stresses between the diamond coating and the substrate are induced by the corresponding difference in the thermal expansion coefficient, deteriorating the interface bonding performance between the diamond coating and the substrate [ 7 ] and limiting the coated tool applicability.…”

Section: Introductionmentioning

confidence: 99%

Effect of Adding Intermediate Layers on the Interface Bonding Performance of WC-Co Diamond-Coated Cemented Carbide Tool Materials

Yang

Yue

et al. 2023

Molecules

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The interface models of diamond-coated WC-Co cemented carbide (DCCC) were constructed without intermediate layers and with different interface terminals, such as intermediate layers of TiC, TiN, CrN, and SiC. The adhesion work of the interface model was calculated based on the first principle. The results show that the adhesion work of the interface was increased after adding four intermediate layers. Their effect on improving the interface adhesion performance of cemented carbide coated with diamond was ranked in descending order as follows: SiC > CrN > TiC > TiN. The charge density difference and the density of states were further analyzed. After adding the intermediate layer, the charge distribution at the interface junction was changed, and the electron cloud at the interface junction overlapped to form a more stable chemical bond. Additionally, after adding the intermediate layer, the density of states of the atoms at the interface increased in the energy overlapping area. The formant formed between the electronic orbitals enhances the bond strength. Thus, the interface bonding performance of DCCC was enhanced. Among them, the most obvious was the interatomic electron cloud overlapping at the diamond/SiCC-Si/WC-Co interface, its bond length was the shortest (1.62 Å), the energy region forming the resonance peak was the largest (−5–20 eV), and the bonding was the strongest. The interatomic bond length at the diamond/TiNTi/WC-Co interface was the longest (4.11 Å), the energy region forming the resonance peak was the smallest (−5–16 eV), and the bonding was the weakest. Comprehensively considering four kinds of intermediate layers, the best intermediate layer for improving the interface bonding performance of DCCC was SiC, and the worst was TiN.

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The effect of transition-metal seeding powder on deposition and growth of diamond synthesized by hot filament chemical vapor deposition processes on cemented carbide substrates and its characterization

Cited by 8 publications

References 57 publications

Synthesis of diamond crystal growth on tungsten carbide inserts by HFCVD using various seeding powders

Synthesis of diamond crystal growth on tungsten carbide inserts by HFCVD using various seeding powders

Structural analyses of carbon films deposited at different total mass rates in a hot-filament CVD system

Effect of Adding Intermediate Layers on the Interface Bonding Performance of WC-Co Diamond-Coated Cemented Carbide Tool Materials

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