The Effect of the Sol-gel Spincoating Deposition Technique on the Memristive Behaviour of ZnO-based Memristive Device

Shaari, Nor Azira Akma; Kasim, S. M. M.; Sauki, Nur Sa’adah Muhamad; Herman, Sukreen Hana

doi:10.1088/1757-899x/99/1/012022

Cited by 4 publications

(3 citation statements)

References 10 publications

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“…concentration [38][39][40], the solvent [41][42][43][44][45], the rotation speed [46][47][48][49][50][51][52][53][54][55][56][57] and the nature of the substrate [58][59][60][61][62][63]. In the present study, spin coating, which is usually devoted to the spreading of viscous solutions, is used in an uncommon configuration of fluid liquid deposition, giving rise to very thin films (<100 nm) with peculiar nano-granular morphologies.…”

Section: Experimental Details 21 Sol-gel Spin-coating Deposition Processmentioning

confidence: 99%

“…The morphology of the ZnO film results from the tuning of many chemical and physical parameters including the concentration and nature of the reagents, the rotation speed, the spreading time, the substrate characteristics, the drying and annealing temperatures. Especially, the rotation speed is known to have various effects on grain size [49,50], roughness [46][47][48][49], orientation [50][51][52], stoichiometric compositions [51], thickness [48,[51][52][53][54][55] and electrical performances [52,56,57]. However, these effects are expected to be changed in the case of liquid spreading, as the centrifugal force has the double effect of first spreading the liquid into a very thin liquid film and then ejecting the excess liquid from the substrate.…”

Section: Spin-coating Rotation Speedmentioning

confidence: 99%

“…It is known that thin films properties and morphology can be affected by postprocessing annealing temperature, which has been the subject of several works. In the case of the sol-gel spin coating technique, the morphology and properties of the film are also impacted by processing parameters such as the chelating agent [36,37], the zinc salt concentration [38][39][40], the solvent [41][42][43][44][45], the rotation speed [46][47][48][49][50][51][52][53][54][55][56][57] and the nature of the substrate [58][59][60][61][62][63]. In the present study, spin coating, which is usually devoted to the spreading of viscous solutions, is used in an uncommon configuration of fluid liquid deposition, giving rise to very thin films (<100 nm) with peculiar nano-granular morphologies.…”

Section: Introductionmentioning

confidence: 99%

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Preparation of Very Thin Zinc Oxide Films by Liquid Deposition Process: Review of Key Processing Parameters

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We used sol-gel and spin-coating in the original configuration of a liquid deposition process to synthesize particularly thin ZnO films (<100 nm) with nano-granular morphology, high grain orientation and variable optical properties. The concentration of the zinc salt, the concentration of the chelating agent, the nature of the solvent and the substrate material have been identified as key parameters that determine the microstructure of the deposited layer and thus its final properties. The thorough and practical examination of the effects of the synthesis parameters evidenced a three-step growth mechanism for these ZnO thin films: (i) a reaction of precursors, (ii) a formation of nuclei, and (iii) a coalescence of nanoparticles under thermal annealing. The growth of these very thin films is thus conditioned by the interaction between the liquid phase and the substrate especially during the initial steps of the spin coating process. Such thin ZnO films with such nano-granular morphology may be of great interest in various applications, especially those requiring a large active surface area.

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Section: Experimental Details 21 Sol-gel Spin-coating Deposition Processmentioning

confidence: 99%

Section: Spin-coating Rotation Speedmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Preparation of Very Thin Zinc Oxide Films by Liquid Deposition Process: Review of Key Processing Parameters

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

et al. 2016

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The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.

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The Effect of the Sol-gel Spincoating Deposition Technique on the Memristive Behaviour of ZnO-based Memristive Device

Cited by 4 publications

References 10 publications

Preparation of Very Thin Zinc Oxide Films by Liquid Deposition Process: Review of Key Processing Parameters

Preparation of Very Thin Zinc Oxide Films by Liquid Deposition Process: Review of Key Processing Parameters

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

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