The effect of the series resistance on the photovoltaic properties of In-doped CdTe( p ) thin film homojunction structure

Mohamed, W.F.; Shehathah, Maan Ahmed

doi:10.1016/s0960-1481(00)00008-2

Cited by 9 publications

(8 citation statements)

References 3 publications

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“…The series resistance is determined as [22]. Hence the calculated range of series resistance is 5 -10 Ω. I-V characteristics of CdS/CdTe show that the device has high series resistance [8]. The real value of measured series resistance is higher than the calculated one due to the parasitic resistance connected in series to the main cell.…”

Section: The Effect Of Series Resistancementioning

confidence: 94%

“…The solar cell model given by Equation (1) is simulated using MATLAB. The photo generated current density is measured using the following equation [8]:…”

Section: The Effect Of Series Resistancementioning

confidence: 99%

“…Due to high absorption coefficient and small diffusion length, the junction must be formed close to the surface, which reduces the carrier lifetime through surface recombination. The In-doped CdTe (p) thin film is of high bulk resistivity which largely affects its photovoltaic properties particularly the short circuit current [8]. It was noted that, the deteriorative effect of the high bulk resistivity increases by increasing the light intensity, which in turn limits the benefit of using light concentrators that improve the short circuit current.…”

Section: Introductionmentioning

confidence: 99%

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Power Conversion Enhancement of CdS/CdTe Solar Cell Interconnected with Tunnel Diode

Mohammed¹,

Daoud²,

Al-Tikriti³

2012

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One of the most promising solar cell devices is cadmium telluride (CdTe) based. These cells however, have their own problems of stability and degradation in efficiency. Measurements show that CdS/CdTe solar cell has high series resistance which degrades the performance of solar cell energy conversion. Both active layers (CdS and CdTe) had been fabricated by thermal evaporation and tested individually. It was found that CdS window layer of 300 nm have the lowest series resistance with maximum light absorption. While 5 - 7 µm CdTe absorber layer absorbed more than 90% of the incident light with minimum series resistance. A complete CdS/CdTe solar cell was fabricated and tested. It was found that deposited cell without heat treatment shows that the short circuit current increment decreases as the light intensity increases. This type of deposited cell has low conversion efficiency. The energy conversion efficiency was improved by heat treatment, depositing heavily doped layer at the back of the cell and minimizing the contact resistivity by depositing material with resistivity less than 1 m??cm<sup>2</sup>. All these modifications were not enough because the back contact is non-ohmic. Tunnel diode of CdTe (p++)/CdS (n++) was deposited in the back of the cell. The energy conversion efficiency was improved by more than 7%

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Section: The Effect Of Series Resistancementioning

confidence: 94%

“…The solar cell model given by Equation (1) is simulated using MATLAB. The photo generated current density is measured using the following equation [8]:…”

Section: The Effect Of Series Resistancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Power Conversion Enhancement of CdS/CdTe Solar Cell Interconnected with Tunnel Diode

Mohammed¹,

Daoud²,

Al-Tikriti³

2012

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“…It is observed that the photogenerated current increases as the light intensity increased up to (3.5 W/cm 2 ) where beyond this light intensity the current reaches saturation. This can be explained due to the effect of series resistance which increases with light intensity [15]. This effect will limit the advantage of the use of high light intensity.…”

Section: IIImentioning

confidence: 99%

The effects of deposition parameters on CdS thin films optoelectronic properties

Munther¹,

Wagah²

2017

Seventh International Conference on Advances in Computing, Electronics and Electrical Technology - CEET 2017

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Cadmium sulfide CdS has band gab of 2.42 eV, which is suitable as window material for thin film to fabricate solar cell. It has high absorption coefficient and acceptable conversion efficiency in addition to its low cost. Many samples are prepared using vacuum evaporation techniques with different deposition parameters. Hall Effect, resistivity and optoelectronic measurements are conducted on the fabricated samples. The analysis of the results indicates that the optoelectronic properties, namely photogenerated current are dependent on the thickness, substrate temperature and deposition rate.

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“…CdTe is a unique among II-IV group of binary semiconducting compounds, as it has both p-and n-type conduction [2]. This permits the fabrication of solar cells in both homo-and heterojunction configuration [3][4][5][6]. Its band gap about 1.5eV, just in the middle of the solar spectrum, and possess high absorption coefficient (α) (>10 4 cm -1 ) for the visible solar spectrum make CdTe very good candidate material for photovoltaic conversion [7].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Dopant and Substrate Temperature on the Current-Volltage Characteristics for CdTe/P-GaAs Heterojunction

Shaikley¹,

Alias²,

Alnajjar³

et al. 2014

IJIRSET

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Thin films of undoped and doped CdTe with thickness around 500±10nm were deposited by thermal evaporation technique onto (100) p-GaAs wafer. The effect of both Al and Sb dopant percentages (0.5, 1.5 and 2.5) and substrate temperatures (RT and 423K) on the optoelectronic properties of CdTe/p-GaAs heterojunction was studied. I-V characteristics under illumination for the prepared CdTe/p-GaAs heterojunctions showed a good significant photovoltaic effect. The value of short circuit current (I sc ) for CdTe/p-GaAs heterojunction doped with Sb was higher than that doped with Al. The effect of Al doping on the value of the open-circuit voltage (V oc ) was more than Sb doped. The outcomes of all these measurements for various (Al and Sb)doping of thin CdTe deposited on GaAs were indicated that 2.5%Sb-doped CdTe/p-GaAs heterojunctions deposited at RT and 423K posses a good response to illumination which make it a candidate for heterojunction device used as basic for fabricating photo sensors.

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The effect of the series resistance on the photovoltaic properties of In-doped CdTe( p ) thin film homojunction structure

Cited by 9 publications

References 3 publications

Power Conversion Enhancement of CdS/CdTe Solar Cell Interconnected with Tunnel Diode

Power Conversion Enhancement of CdS/CdTe Solar Cell Interconnected with Tunnel Diode

The effects of deposition parameters on CdS thin films optoelectronic properties

The Influence of Dopant and Substrate Temperature on the Current-Volltage Characteristics for CdTe/P-GaAs Heterojunction

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