The effect of the physical form of the oxide on the conductivity changes produced by CH4, CO and H2O on ZnO

Jones, Alan R.; Jones, Tony; Mann, Brenda; Firth, J. G.

doi:10.1016/0250-6874(84)87008-0

Cited by 100 publications

(27 citation statements)

References 11 publications

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“…Zinc oxide (ZnO), with a band gap energy on the order of 3.3 eV [1], represents, in this context, an important material for the construction of optoelectronic structures. Due to it's low cost as well as its favorable optoelectronic and electroluminescent properties, Zinc oxide has been satisfactorily implemented as a gas sensor [2][3][4][5][6][7], an acoustic device [8][9][10][11], a transparent electrode and a solar cell [12][13][14][15][16]. To improve the optical as well as the electrical properties of ZnO thin films, it is well know that these films have been doped with various elements such as F, B, Al, Ga, In, Sn etc.…”

Section: Introductionmentioning

confidence: 99%

Structural, opto-thermal and electrical properties of ZnO:Mo sprayed thin films

Boukhachem

Ouni

Karyaoui

et al. 2012

Materials Science in Semiconductor Processing

106

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Section: Introductionmentioning

confidence: 99%

Structural, opto-thermal and electrical properties of ZnO:Mo sprayed thin films

Boukhachem

Ouni

Karyaoui

et al. 2012

Materials Science in Semiconductor Processing

106

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“…Besides, ZnO is one of the most extensively studied metal oxide semiconductor material, next to SnO 2 for the toxic and hazardous gase sensors [7][8] . It is well known that the sensitivity of metal oxide semiconductor gas sensors can be improved upon doping or addition of catalyst.…”

Section: Introductionmentioning

confidence: 99%

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Srinatha

Kamble³

et al. 2016

RSC Adv.

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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with raising RF power. Besides, the increasing RF power is found to improve the crystallinity and grains growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of Al 3+ ion found to increase with increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 °C. The AZO film shows good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

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“…Several forms of sensors have been fabricated including single crystal [1], sintered bodies [1,6], thick layers [8], thin films [2,3,5,7], and nano structures [4,9]. The sensing performance (magnitude of gas response (sensitivity), selectivity, sensing temperature, and so on) depends on the electronic and structural properties of the sensor materials, and a common approach to improve the sensing properties is to employ the metal additives such as Al, Sb, Cu, and Pt [5,8,10,11].…”

Section: Introductionmentioning

confidence: 99%

“…Oxide semiconductor ZnO has been extensively studied as a gas sensor detecting gases such as CH 4 , CO, H 2 , C 2 H 5 OH, Cl, and H 2 S [1][2][3][4][5][6][7][8][9], based on the resisivity changes from adsorption/desorption and reactions with target gases. Several forms of sensors have been fabricated including single crystal [1], sintered bodies [1,6], thick layers [8], thin films [2,3,5,7], and nano structures [4,9].…”

Section: Introductionmentioning

confidence: 99%

CO gas sensing properties in Pd-added ZnO sensors

et al. 2007

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Unadded and 0.5 mol% Pd-added ZnO bulk and thin films were prepared by sintering and sputtering, respectively, and their CO gas sensing properties were investigated. The effects of Pd addition, sensing temperature (100-500°C), and humidity on the CO gas response were discussed. In the bulk sensors, Pd-addition lowered the temperature for the maximum CO gas response (sensitivity) from 400 to 300°C, whereas the thin film sensors (unadded and Pd-added) exhibited maximum gas response at 200°C. The Pd-addition enhanced the CO gas response in thin film sensors, and it was also effective for reducing the interference from humidity in both bulk and thin film sensors.

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The effect of the physical form of the oxide on the conductivity changes produced by CH4, CO and H2O on ZnO

Cited by 100 publications

References 11 publications

Structural, opto-thermal and electrical properties of ZnO:Mo sprayed thin films

Structural, opto-thermal and electrical properties of ZnO:Mo sprayed thin films

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

CO gas sensing properties in Pd-added ZnO sensors

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