The Effect of the Passivation Material on the Stress and Stress Relaxation Behavior of Narrow Al-Si-Cu Lines

Witvrouw, Ann; Flinn, P. A.; Maex, Karen

doi:10.1557/proc-428-519

Cited by 6 publications

(1 citation statement)

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“…Experimental determination of volume-averaged stresses in lines often utilize a combination of x-ray diffraction, curvature measurements, or finite element analysis. [1][2][3][4] Unlike the experimental determination of volume-averaged stresses in a thin film, or in thin unpassivated lines, the determination of stresses in passivated lines requires a knowledge of the material properties of the line and passivation. In order to determine the internal stresses theoretically, the finite element method [5][6][7] as well as approximate analytical formulas have been utilized.…”

Section: Introductionmentioning

confidence: 99%

Analysis of average thermal stresses in passivated metal interconnects

Wikström

Gudmundson

Suresh

1999

Journal of Applied Physics

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Volume-averaged thermal stresses in passivated metal interconnects on Si substrates are derived for situations where the thickness to width ratio of the interconnect lines is ''small'' or ''large.'' The analysis provides different components of volume-averaged stresses for the most general case of thermal and elastic anisotropy in the passivation layer, the interconnect line, and the substrate. It is shown that the theoretical predictions, particularly those for the hydrostatic stresses, are in agreement with detailed finite element calculations for a wide range of line and passivation geometries of practical interest. The theoretical predictions of average hydrostatic stresses are also found to be in reasonable agreement with available experimental results for thermal stresses derived from x-ray diffraction measurements on passivated Cu lines. The present theoretical results are shown to be far more accurate than prior stress analyses for periodic passivated lines based on Eshelby's theory of inclusions.

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Section: Introductionmentioning

confidence: 99%

Analysis of average thermal stresses in passivated metal interconnects

Wikström

Gudmundson

Suresh

1999

Journal of Applied Physics

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Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

Keller

Geiss

Barbosa

et al. 2007

Metall Mater Trans A

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We demonstrate the rapid growth of grains in nonpassivated, sputtered Al-1 at. pct Si interconnects during 200 Hz thermal cycling induced by alternating current. Mean grain diameters were observed by use of automated electron backscatter diffraction (EBSD) to increase by more than 70 pct after an accumulated cycling time of less than 6 minutes over a temperature range of 200°C, which corresponded to a total strain range of 4 · 10 )3 . Plasticity in growing grains primarily took the form of topography formation at the free surface and grain rotation, while consumed grains tended to retain relatively high dislocation content. Grain growth was characterized by means of pairwise comparisons in EBSD pattern quality across moving boundaries. Out of 92 cases where a grain was observed to grow into its neighbor, 61 cases indicated that the growing grain had a higher average pattern quality factor than that of the consumed grain, at the 95 pct confidence level. The results are consistent with a strain-induced boundary migration mechanism, wherein stored plastic strain energy differences from grain to grain drive growth, some of which was observed after only 10 seconds of cycling.

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