The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties

Jeon, Soo-Kun; Lee, Jaegab; Park, Eun-Hyun; Jang, Jin; Lim, Jae-Gu; Kim, Seo-Kun; Park, Joong-Seo

doi:10.1063/1.3114974

Cited by 47 publications

(17 citation statements)

References 8 publications

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“…Group III-nitride wide-band-gap semiconductors have been recognized as leading materials not only for high temperature and high power microelectronic devices [1][2][3][4][5] but also for many optoelectronic devices [6][7][8][9][10][11][12], such as light-emitting diodes (LEDs) and laser diodes (LDs). One of the frontiers of LED development is the application of AlGaN alloys to enable LEDs emitting at deep ultraviolet (UV) wavelengths (l < 300 nm).…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of Al x Ga1 − x N/Al y Ga1 − y N multiple quantum wells for deep ultraviolet emission

Wang

et al. 2009

Front. Optoelectron. China

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The Al x Ga 1 -x N/Al y Ga 1 -y N multiple quantum well (MQW) structure for deep ultraviolet emission has been grown on sapphire by metal organic chemical vapor deposition (MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and cathodoluminescence (CL) are used to characterize the structural and optical properties of MQWs, respectively. Clear step flows can be observed in the AFM image indicating a two-dimensional growth model. There are many cracks on the surface of the MQW structure because of the high tensile stress. HRXRD shows multiple satellite peaks to the 2nd order. The HRXRD simulation shows that the MQW period is about 11.5 nm. The emission peak of Al x Ga 1 -x N/Al y Ga 1 -y N MQWs is about 295 nm in the deep ultraviolet region from the CL spectra.

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Section: Introductionmentioning

confidence: 99%

Structural and optical properties of Al x Ga1 − x N/Al y Ga1 − y N multiple quantum wells for deep ultraviolet emission

Wang

et al. 2009

Front. Optoelectron. China

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“…3 presents humanbody mode (HBM) ESD measurements recorded for the LEDs with various space layer thicknesses. Sample B, with the thicker space layer of 460 nm, provided significantly greater negative HBM-ESD 4000 V pass yields (> 90%) presumably because of its antiparallel polar domains coexisting in the p-type GaNlayer region or/and the thicker space layer by which the internal capacitance of devices is increased [10]. This improvement in ESD properties can be explained by considering surface charge models depicted in Fig.…”

Section: (A)]mentioning

confidence: 88%

“…Using Antiparallel Ga-and N-Polar Domains in p-GaN Layer [7], [8]; varying the p-GaN layer growth temperature [6]; developing modulation-doped AlGaN-GaN superlattice structures [9]; and varying the internal-capacitance structure of the LED [10]. We are unaware, however, of any reports describing the relationship between the p-layer polarity and the ESD properties of nitride-based LEDs.…”

Section: Improvement Of Esd Level Of Gan-based Ledsmentioning

confidence: 93%

Improvement of ESD Level of GaN-Based LEDs Using Antiparallel Ga- and N-Polar Domains in p-GaN Layer

Huang

Hong

Chou

2011

IEEE Electron Device Lett.

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Electrostatic discharge (ESD) endurance ability of InGaN blue light-emitting diodes is significantly improved when antiparallel Ga-and N-polar domains coexist within the p-type GaN-layer region. The inversion of Ga to N polarity in this region, which is verified using convergent-beam electron diffraction, was induced by the stress accumulated in the underlying layers. A typical p-type GaN layer, which is composed of a periodical arrangement of Ga-polar domains (width, 450 nm) and antiparallel Ga-and N-polar domains (width, 150 nm), improves the negative human-body mode ESD 4000 V pass yields to greater than 90%.Index Terms-Antiparallel domain, electrostatic discharge (ESD), InGaN light-emitting diode (LED), p-type GaN layer. N ITRIDES are semiconductors possessing wide and direct energy gaps. They have attracted much interest as materials for use in short-wavelength optoelectronic and high-temperature electronic applications, such as visible lightemitting diodes (LEDs), laser diodes, and photodetectors. Because nitride-based LEDs are applied in traffic signals, backlight units, and general lighting, their reliability is an important issue. In particular, the electrostatic discharge (ESD) stress, which induces latent damage or sudden failure in LED devices, is now one of the most important product specifications of LEDs. The high density of inherent threading dislocations in GaN-based layers grown on lattice-mismatched and insulating sapphire substrates makes these LEDs susceptible to the generation of poor ESD properties during the device encapsulation process. Several attempts have been made to improve the ESD properties of GaN-based LEDs, including combining the LEDs with internal Schottky diodes [1], internal protection diodes [2], [3], or a metal-oxide-semiconductor capacitor [4]; inserting a floating metal ring in the LEDs [5]; employing a device bonding-pad design [6] or thicker p-GaN or p-AlGaN layers Manuscript [7], [8]; varying the p-GaN layer growth temperature [6]; developing modulation-doped AlGaN-GaN superlattice structures [9]; and varying the internal-capacitance structure of the LED [10]. We are unaware, however, of any reports describing the relationship between the p-layer polarity and the ESD properties of nitride-based LEDs.In this letter, we achieved a significant improvement in the ESD properties of an LED through the growth of an elaborate bundle of antiparallel Ga-and N-polar domains within the p-type GaN layer region. We have also developed a plausible model to explain this improvement in the ESD properties.The epitaxial layers of the InGaN LED were grown on (0001) patterned sapphire substrates in a vertical close-coupled showerhead rotating-disk reactor (Thomas Swan Scientific Equipment, Cambridge, U.K.). A 30-nm-thick buffer layer was grown at 550 • C, and then, a 1.5-μm-thick undoped GaN layer, a 5-μm-thick Si-doped GaN n-type layer, and a 10-nm-thick n-type AlGaN cladding layer were grown at 1040 • C. Next, a 260-(sample A) or 460-nm-thick (sample B) heavily Si-doped GaN space layer ...

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“…However, such a method takes extra complex processing steps which might result in higher production cost. Besides, Jeon et al reported that the LEDs with higher internal capacitance are found to be more robust against the external ESD impulse [6]. It indicated that the LED with higher internal capacitance can against higher ESD impulse.…”

Section: Effect Of Varied Undoped Gan Thickness On Esd and Optical Prmentioning

confidence: 96%

Effect of Varied Undoped GaN Thickness on ESD and Optical Properties of GaN-Based LEDs

Chiang

Wang

Chang

et al. 2012

IEEE Photon. Technol. Lett.

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The optical property and electrostatic discharge (ESD) endurance of GaN-based light-emitting diodes (LEDs) with varied undoped GaN thickness are studied and demonstrated. As the undoped GaN thickness increased, the generation of V-shaped defects in the active region was suppressed. Therefore, the output power for a 6-μm-thick undoped GaN layer would be enhanced remarkably due to the reduction of nonradiative recombination ratio within the active region. On the other hand, under a reverse ESD pulse voltage of 5.5 kV, the survival rate of the LEDs with an undoped GaN layer thickness of 1.5, 4, and 6 μm were 75%, 65%, and 55%, respectively. It was found that the ESD endurance for a 1.5-μm-thick undoped GaN layer with higher internal capacitance was obviously better than others. This could be related to the built-in electric field of LEDs induced by spontaneous polarization field.Index Terms-Electrostatic discharge (ESD), GaN-based light-emitting diodes, nonradiative recombination, output power, spontaneous polarization field.

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The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties

Cited by 47 publications

References 8 publications

Structural and optical properties of Al x Ga1 − x N/Al y Ga1 − y N multiple quantum wells for deep ultraviolet emission

Structural and optical properties of Al x Ga1 − x N/Al y Ga1 − y N multiple quantum wells for deep ultraviolet emission

Improvement of ESD Level of GaN-Based LEDs Using Antiparallel Ga- and N-Polar Domains in p-GaN Layer

Effect of Varied Undoped GaN Thickness on ESD and Optical Properties of GaN-Based LEDs

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