The effect of the change in filament characteristics on diamond growth in hot filament chemical vapor deposition

The gas temperature in a hot filament activated diamond chemical vapor deposition system is derived from the vacuum ultraviolet absorption spectrum of the H2 molecule. Curves of growth for the optically thick spectra are calculated using a Voigt line shape and published oscillator strengths in order to measure relative populations of H2 in various rotational and vibrational levels of the ground electronic state. The H2 vibrational levels are nearly in equilibrium. The gas temperature field is most strongly influenced by the substrate temperature. Heat conduction from the filament produces a large temperature gradient near the filament. Heat released or absorbed in gas phase hydrocarbon chemical reactions does not significantly affect the temperature field.

show abstract

Ultraviolet spectroscopy of gaseous species in a hot filament diamond deposition system when C2H2 and H2 are the input gases

Toyoda

Childs

Menningen

et al. 1994

Journal of Applied Physics

View full text Add to dashboard Cite

Gas temperature in a hot filament diamond chemical vapor deposition system Rev.The methyl radical density, acetylene mole fraction, filament properties, and diamond growth rate and film quality are measured in a hot filament chemical vapor deposition system when (;H, and Hz are used as the input gases. The methyl radical density and acetylene mole fraction depend greatly on the degree of filament surface poisoning. This poisoning prevents diamond growth due to a lack of hydrogen atoms and/or methyl radicals. Understanding the large influence of the filament surface catalytic characteristics is important for developing a gas phase model of this system. The results obtained with qHZ and HZ as the input gases are compared to those obtained with Cl& and H, as the input gases. Under conditions when the filament surface is not poisoned, the methyl radical concentrations are similar when either C,H, and H2 are the input gases or when CH, and H2 are the input gases.

show abstract

The effect of the change in filament characteristics on diamond growth in hot filament chemical vapor deposition

Cited by 10 publications

References 12 publications

Growth of CVD Diamond for Electronic Applications

Growth of CVD Diamond for Electronic Applications

Gas temperature in a hot filament diamond chemical vapor deposition system

Ultraviolet spectroscopy of gaseous species in a hot filament diamond deposition system when C2H2 and H2 are the input gases

Contact Info

Product

Resources

About