The Effect of Technological Production Conditions on the Ability of AlN–Y2O3–С-Based Composite Materials to Absorb Microwave Radiation

Serbenyuk, Т. B.; Prikhna, Т. О.; Sverdun, V. B.; Sverdun, N. V.; Chasnyk, V. I.; Karpets, M. V.; Kovylyaev, V. V.

doi:10.3103/s1063457620020100

Cited by 2 publications

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“…In order to improve the densification process of the AlN ceramics usually, alkaline earth oxides and/or rear‐earth oxides are added as sintering promoters, 17 and recently from metal–organic precursors 18 . A number of elements, such as Si, Mg, Cr, and Ni, have been proposed as a dopant to AlN in order to improve certain electronic properties for various applications 19–26 …”

Section: Introductionmentioning

confidence: 99%

“…18 A number of elements, such as Si, Mg, Cr, and Ni, have been proposed as a dopant to AlN in order to improve certain electronic properties for various applications. [19][20][21][22][23][24][25][26] It is known that AlN exhibits high spontaneous polarization (including piezoelectric fields) in the absence of an external electric field, which unfortunately leads to a reduction in emission efficiency. 27 However, this can be avoided by introducing boron into aluminum nitride, which leads to the desired improvement of piezoelectric and mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

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Novel boron‐rich aluminum nitride advanced ceramic materials

Zagorac

Fonović

et al. 2022

Int J Applied Ceramic Tech

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Aluminum nitride (AlN) and boron nitride (BN) are well‐known ceramic materials with numerous valuable properties, whereas recently there is a growing field of research on the AlN/BN advanced ceramic materials. Here, we present a study on boron‐rich AlN, structural and electronic properties, and structure–property relationship. Several AlxB1−xN solid solutions (x = 1, .875, .75, and .625) have been investigated, and structure optimization has been performed for four different structure types: h‐BN, wurtzite, sphalerite, and rock salt. First‐principles calculations were performed using hybrid B3LYP functional. New modifications and compounds have been predicted as a function of boron concentration in AlN, and especially, interesting phase transitions were found at extreme pressure conditions. Electronic properties and band structures were computed, and the possibility for bandgap tuning has been discovered. The present study, and especially the structure–property relationship, gives new possibilities for bandgap engineering in boron‐rich AlN electroceramic materials.

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Section: Introductionmentioning

confidence: 99%