The effect of Te doping on the electronic structure and thermoelectric properties of SnSe

Chen, Song; Cai, Kefeng; Zhao, Wenyu

doi:10.1016/j.physb.2012.06.041

Cited by 110 publications

(67 citation statements)

References 20 publications

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“…Though SnSe is a well-known semiconductor studied for its potential in solar cells or in phase-change memory alloys, 12,13 its thermoelectric properties have been only scarcely investigated. 14 Of particular relevance are the extremely high ZT values reported by Zhao et al 11 that reach 2.6 and 2.3 at 950 K (i.e., in the high-temperature phase) along the b and c axes, respectively. A more moderate value (0.9 at 950 K), though still high, was reached along the a axis.…”

mentioning

confidence: 93%

Assessment of the thermoelectric performance of polycrystalline p-type SnSe

Sassi¹,

Candolfi²,

Vaney³

et al. 2014

Applied Physics Letters

337

324

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International audienceWe report the evaluation of the thermoelectric performance of polycrystalline p-type SnSe, a material in which unprecedented values of the thermoelectric figure of merit ZT have been recently discovered in single crystals. Besides anisotropic transport properties, our results confirm that this compound exhibits intrinsically very low thermal conductivity values. The electrical properties show trends typical of lightly doped, intrinsic semiconductors with thermopower values reaching 500 mu V K-1 in a broad temperature range. An orthorhombic-to-orthorhombic transition sets in at 823 K, a temperature at which the power factor reaches its maximum value. A maximum ZT of 0.5 was obtained at 823 K, suggesting that proper optimization of the transport properties of SnSe might lead to higher ZT values. These findings indicate that this system represents an interesting experimental platform for the search of highly efficient thermoelectric materials

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mentioning

confidence: 93%

Assessment of the thermoelectric performance of polycrystalline p-type SnSe

Sassi¹,

Candolfi²,

Vaney³

et al. 2014

Applied Physics Letters

337

324

View full text Add to dashboard Cite

show abstract

“…SnTe could be an alternative according to a recent study 13 but the use of Te is still a big disadvantage for domestic devices that are more cost-sensitive. The other IV-VI compounds, including SnSe, have not been studied as carefully in polycrystalline form, 14 compared with the compounds mentioned above. High thermoelectric performance has just recently been reported 15 in undoped, single crystal SnSe accelerating interest in this material.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of p-type polycrystalline SnSe doped with Ag

et al. 2014

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Many IV-VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV-VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport properties as a polycrystalline thermoelectric material have rarely been studied. Here we present our study of p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing. SnSe has anisotropic properties with hysteresis observed in resistivity between 300 and 650 K regardless of doping. Ag is not an ideal dopant but is able to increase the carrier density significantly, as a result a peak zT of 0.6 was observed at 750 K. Transport properties of doped SnSe can be explained with a single parabolic band model, which suggests promising potential for this compound together with its challenges.

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“…[4][5][6][7][8][9][10] Although SnSe belongs to this family of compounds, it crystallizes in a layered structure described within the orthorhombic space group Pnma (Figure 1) resulting in strongly anisotropic transport properties. [11,12] While several theoretical and experimental investigations unveiled some of its mechanical, electronic and thermal properties [13][14][15][16][17][18][19][20][21][22], this binary compound has only recently come to the forefront of research owing to the report of extremely high ZT values of up to 2.6 near 800 K in single crystals. [13] These record values mainly arose due to the very low thermal conductivity values measured in this study.…”

Section: Introductionmentioning

confidence: 99%