2011
DOI: 10.1016/j.jpcs.2011.06.001
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The effect of sulfide substitution in the mixed conductor Cu7PSe6

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Cited by 10 publications
(15 citation statements)
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“…An Arrhenius plot of the data from 425 to 575 K is shown in the inset of Figure 3a. The calculated activation energy of 0.28 ± 0.01 eV is larger compared to the value of 0.17 eV for the high temperature modification and 0.22 eV for the low temperature modifications reported by Beeken et al 19 However, the activation energies are in good agreement since the absolute values are very small. Temperature dependent Hall measurements were performed in order to obtain Hall carrier mobilities μ H and Hall carrier concentrations n H .…”
Section: ■ Introductioncontrasting
confidence: 67%
“…An Arrhenius plot of the data from 425 to 575 K is shown in the inset of Figure 3a. The calculated activation energy of 0.28 ± 0.01 eV is larger compared to the value of 0.17 eV for the high temperature modification and 0.22 eV for the low temperature modifications reported by Beeken et al 19 However, the activation energies are in good agreement since the absolute values are very small. Temperature dependent Hall measurements were performed in order to obtain Hall carrier mobilities μ H and Hall carrier concentrations n H .…”
Section: ■ Introductioncontrasting
confidence: 67%
“…Thus, the isovalent substitution Se 2by S 2-in Cu7P(Se1-xSx)6 allows the stabilization of the polymorph (γ-modification) with the most promising properties. This conclusion agrees with results of the previous study of the conductivity of solid solution Cu7P(Se1-xSx)6, where the phase transition from the primitive cubic structure P213 to the face-centered one 43 Fm was detected already at room temperature for the sulfur contents x  0.08 [6]. Thus, the face-centered symmetry 43 Fm , realized in Cu7PS6 and Cu7PSe6 crystals and their solid solution, is associated with the temperature-dependent copper ion diffusion, which introduces the structural disorder or leads to amorphization.…”
supporting
confidence: 93%
“…It was found that high room temperature total conductivity of Cu7PSe6,  = 0.4 S/cm, is about 90% due to the electronic component of conductivity [4,5]. The electric conductivity of Cu7PS6 in the temperature range 296 -351 K was measured to be in the range 210 -5 -510 -5 S/cm [3] that is much smaller than that in Cu7PSe6 [6]. Due to the same crystal structure of Cu7PSe6 and Cu7PS6 mentioned above the high structural disorder of copper atoms is expected in Cu7PS6, similarly like in Cu7PSe6 [4].…”
mentioning
confidence: 95%
“…At temperatures from 425 to 575 K the calculated activation energy of 0.28 eV reported in work [7] was larger than the value of 0.17 eV for the high temperature modification reported by Beeken et al earlier [8]. In the temperature region between 325 and 425 K the temperature dependent electrical resistivity of polycrystalline Cu 7 PSe 6 shows a strong decrease of electrical resistivity, related to the abovementioned phase transition [5][6][7][8].…”
Section: Introductioncontrasting
confidence: 57%