The effect of substrate tilt on MOCVD growth of {100}CdTe on {100}GaAs

The morphology of CdTe deposited by organometallic vapor phase epitaxy: The effect of substrate misorientation

“…This result agrees with the finding of Snyder et al 2 who observed facet-free morphology between 3.8-4.8°; these results also are not far from the 3.5° result reported by D'yakonov et al 1 and Hamilton et al 5 for deposition on GaAs(100). It seems that the critical factor in preventing facets is the step density, not the material of the substrate, to first order.…”

“…D'yakonov et al 1 studied CdTe growth on a spherical depression in a GaAs(100) substrate using OMVPE and found that the density of facets decreased almost to zero with a misorientation of 2.7° toward azimuth [110] and 3.5° toward azimuth [1 10]. Hamilton et al 5 confirmed the results of D'yakonov et al in their deposits of CdTe on a GaAs lens. Snyder et al 2 also observed a remarkable change of film morphology for 3.8-4.8° misorientation toward <111> Te following homoepitaxial growth of CdTe on a lenticular substrate.…”

“…The quality of CdTe and Hg 1-x Cd x Te grown by organometallic vapor phase epitaxy (OMVPE) [1][2][3][4][5] and molecular beam epitaxy (MBE) 6,7 depends on the crystallographic orientation of the substrate. Epitaxial layers grown on CdTe{100} show good crystalline quality but poor surface morphology because of the formation of pyramidal facets.…”