The effect of substrate temperature on P-CVD deposited a-SiGe:H films

Rashad, Abduljabbar; Sali, Jaydeep V.; Marathe, B. R.; Takwale, M.G.; Shaligram, A. D.

doi:10.1016/s0927-0248(98)00147-0

Cited by 4 publications

(4 citation statements)

References 15 publications

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“…From these measurements the ratios σ ph /σ d300 , at room temperature, for the samples fabricated at different R Ge -values were determined (see table 1). The data obtained are in good agreement with the data of [7,8].…”

Section: Resultssupporting

confidence: 88%

“…The high degree of hydrogen dilution of the gas mixture during the deposition procedure improves the properties of a-SiGe:H [5,6]. However, this significantly decreases the deposition rate [7,8]. Increase of the deposition rate of the active photoconductive layer is necessary to reduce the degradation of the previously fabricated layers during the deposition, and to enhance the cost/efficiency ratio, which is an important factor for industrial implementation of solar cell technology.…”

Section: Introductionmentioning

confidence: 99%

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The properties of a-SiGe:H films fabricated by a novel deposition method

Budaguan

Шерченков

Gorbulin

et al. 2001

J. Phys.: Condens. Matter

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In this work a novel 55 kHz plasma-enhanced chemical vapour deposition (PECVD) technique for deposition of a-SiGe:H films at high deposition rates is developed. According to infrared spectroscopy and atomic force microscopy analysis the 55 kHz a-SiGe:H films possess island-type microstructure. The Si-Hn and Ge-Hn configurations are clustered on the island surfaces and do not affect the optical band gap. The Tauc band gap is determined by the concentration of Ge-Si bonds formed in the interior of the islands. At low germanium content in the gas mixture (RGe⩽27.5%) the Si-Hn-related microstructure controls the Fermi level position while the formation of Ge-related defects determines which recombination centres are formed in the a-SiGe:H films. At RGe>27.5% the formation of Ge-Hn microstructure controls the optoelectronic properties of 55 kHz PECVD a-SiGe:H films.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

The properties of a-SiGe:H films fabricated by a novel deposition method

Budaguan

Шерченков

Gorbulin

et al. 2001

J. Phys.: Condens. Matter

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“…However, both hydrogen dilution and hydrogen plasma annealing limited the film growth rate. Rashad et al 11 studied the effect of the substrate temperature on the properties of the a‐SiGe:H films. Nishikawa et al 12 found that the photosensitivity of the a‐SiGe:H alloy increased on increasing the plasma power when the deposition pressure was low, such as 0.5 Torr.…”

Section: Introductionmentioning

confidence: 99%

High‐performance a‐SiGe:H thin film prepared by plasma‐enhanced chemical vapor deposition with high plasma power for solar‐cell application

Yan

Zhao

et al. 2012

Physica Status Solidi (a)

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Hydrogenated amorphous silicon germanium (a‐SiGe:H) thin films were prepared by a 13.56‐MHz plasma‐enhanced chemical vapor deposition (PECVD) method. The optical, optoelectronic, and microstructure properties of the a‐SiGe:H thin films prepared with different plasma powers were investigated systematically by transmission, photo/dark conductivity, Raman, and Fourier transform infrared (FTIR) spectroscopy measurements. It was found that when the deposition pressure was high and the hydrogen (H2) dilution ratio ([H2]/([SiH4] + [GeH4])) was low, an appropriate high plasma power could enlarge the optical bandgap (Eg) by reducing the Ge content in the thin film, enhance the film photosensitivity by improving the film microstructure, and increase the film growth rate. As a demonstration, excellent a‐SiGe:H thin film with Eg of 1.5 eV, the photosensitivity of above 104 and a growth rate of 6.6 Å s−1 was successfully fabricated for the solar‐cell application with a plasma power density of 400 mW cm−2, a deposition pressure of 3 Torr, and a H2 dilution ratio equal to 3 at 220 °C. The underlying mechanism was further analyzed.

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“…For example, Zeman et al [7] investigated the effect of hydrogen dilution, i.e., the flow rates of gas sources. Rashad et al [8] studied the substrate temperature effect. Hazra et al [9] gave out the influence of the plasma power.…”

Section: Introductionmentioning

confidence: 99%

Factorial Experiment Study on Deposition Parameter Dependence of the Energy Bandgap of a-SiGe: H Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

Zhao

Bao

Zhao

et al. 2012

AMR

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The energy bandgap (Eg) of a-SiGe:H thin film prepared by plasma enhanced chemical vapor deposition (PECVD) is greatly dependent on the deposition conditions. By controlling the flow rates of the supplied gas sources, the total gas pressure, the plasma power, the substrate temperature and so on, Eg can be adjusted. Although the influence of the above deposition factors has been investigated individually, which factor is the most important is still not clear. Here, a 6-factor 5-level factorial experiment was designed to investigate the influence of the deposition factors comprehensively. By making the main effect analysis to Eg, not only the influence of each deposition factor was deduced, but also the most critical factors were selected out. It was found that the flow rates of SiH4 and GeH4, and the total gas pressure played the important roles for the Eg adjustment of a-SiGe:H thin film. So much attention can be only paid to optimize such critical factors with other factors as some default values according to the experience. Thus, the work load can be reduced greatly.

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The effect of substrate temperature on P-CVD deposited a-SiGe:H films

Cited by 4 publications

References 15 publications

The properties of a-SiGe:H films fabricated by a novel deposition method

The properties of a-SiGe:H films fabricated by a novel deposition method

High‐performance a‐SiGe:H thin film prepared by plasma‐enhanced chemical vapor deposition with high plasma power for solar‐cell application

Factorial Experiment Study on Deposition Parameter Dependence of the Energy Bandgap of a-SiGe: H Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

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