The effect of structural characteristics of ZnO and NiO thin films on the performance of NiO/ZnO photodetectors

Hakkoum, Hadjer; Moumen, Abderrahim; Ghougali, Mebrouk; Sengouga, Nouredine; Comini, Elisabetta

doi:10.1007/s10854-022-09336-w

Cited by 7 publications

(3 citation statements)

References 55 publications

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“…ZnO and NiO exhibit wide band gap energies, strong UV absorption coefficients, and high carrier mobility. − ZnO/NiO heterojunctions with various morphologies can be readily synthesized using simple chemical methods. − Moreover, ZnO and NiO can form type II heterojunctions, allowing for self-powered UV light detection through the photovoltaic effect. , However, several critical challenges persist in the research on ZnO/NiO PDs, primarily related to film defects and light absorption efficiency. The presence of numerous defects during film growth and formation impedes the realization of pristine single-crystal films for thin-film PDs.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Wang,

Liu,

Jiang

et al. 2024

Crystal Growth & Design

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Self-powered ultraviolet (UV) photodetectors (PDs) based on a ZnO/NiO heterojunction have garnered increasing interest due to their straightforward preparation process, exceptional photoresponse performance, and independence from external power sources. However, PDs' detection capabilities are hindered by a high concentration of defects and low carrier mobility within a heterojunction. In this study, the integration of ZnO nanowire (NW) arrays featuring light-trapping structures is explored with heterostructured thin films to optimize the optical functional layer's structure. The resulting ZnO NWs/ZnO/NiO heterojunction PDs, fabricated via RF magnetron sputtering and hydrothermal methods, exhibit significant optoelectronic behavior when exposed to light, functioning autonomously without the need for an external power supply. The synergistic effect of the heterojunction and the light-trapping structure significantly enhances the PD's overall performance. The optimized heterojunction PD demonstrates superior responsivity, detectivity, lower noise equivalent power, and enhanced external quantum efficiency. This work supports the broader application of the light-trapping effect of NWs in a heterostructure and offers novel insights into the development of practical, miniaturized self-powered UV PDs.

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Section: Introductionmentioning

confidence: 99%

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Wang,

Liu,

Jiang

et al. 2024

Crystal Growth & Design

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“…The active laser safety curtain of the company Jutec GmbH (Rastede, Germany) is currently certified for a wavelength range of 900–1080 nm [ 3 ]. Recently developed ultraviolet photodetectors with nickel- and copper-doped zinc oxide nanorods or NiO/ZnO thin films on flexible substrates could also be used for active laser protection applications in the future [ 15 , 16 , 17 ]. The presented active laser protection system with solar cells reacts to wavelengths of 250–810 nm and higher and leads to an extension of the active laser protection range.…”

Section: Introductionmentioning

confidence: 99%

Amorphous Silicon Thin-Film Solar Cells on Fabrics as Large-Scale Detectors for Textile Personal Protective Equipment in Active Laser Safety

et al. 2023

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Laser safety is starting to play an increasingly important role, especially when the laser is used as a tool. Passive laser safety systems quickly reach their limits and, in some cases, provide inadequate protection. To counteract this, various active systems have been developed. Flexible and especially textile-protective materials pose a special challenge. The market still lacks personal protective equipment (PPE) for active laser safety. Covering these materials with solar cells as large-area optical detectors offers a promising possibility. In this work, an active laser protection fabric with amorphous silicon solar cells is presented as a large-scale sensor for continuous wave and pulsed lasers (down to ns). First, the fabric and the solar cells were examined separately for irradiation behavior and damage. Laser irradiation was performed at wavelengths of 245, 355, 532, and 808 nm. The solar cell sensors were then applied directly to the laser protection fabric. The damage and destruction behavior of the active laser protection system was investigated. The results show that the basic safety function of the solar cell is still preserved when the locally damaged or destroyed area is irradiated again. A simple automatic shutdown system was used to demonstrate active laser protection within 50 ms.

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“…Oxide semiconductors have been widely used in semiconductor devices such as field-effect transistors, solar cells, and piezoelectric devices [1][2][3][4]. The zinc oxide (ZnO) semiconductor, for example, is used in a wide range of optoelectronic applications [1][2][3][4][5][6][7][8]. The direct bandgap and large exciton binding energy (60 meV) of ZnO are favorable properties as an active layer of light emitters [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Electroluminescent MgZnO/ZnO Heterojunction Diode

Kim,

Kang

2023

Appl. Sci. Converg. Technol.

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We report the fabrication and characterization of a heterojunction diode with a MgZnO/ZnO structure grown on a GaN/Al 2 O 3 substrate. A radio frequency sputtering method was employed to achieve a high Mg composition in the MgZnO alloy layer, whereas the ZnO layer was epitaxially grown by metal-organic chemical vapor deposition. The MgZnO/ZnO-based heterojunction diode exhibited rectifying currentvoltage (I−V) characteristics under both forward and reverse bias. However, white electroluminescence (EL) emission was observed only under high forward bias. To understand these phenomena, we thoroughly investigated the I−V characteristics of the heterojunction diode, which revealed that the tunneling of holes through the MgZnO barrier is an important mechanism for EL emission. In particular, the Fowler-Nordheim (FN) tunneling of holes is mainly responsible for EL emission under high forward bias. An explanatory schematic of the band diagram based on the I−V characteristics suggests that the EL emission is primarily attributed to the injection of holes via FN tunneling through the MgZnO barrier. This study provides a potential application for optoelectronic devices using MgZnO/ZnO-based heterostructures as ZnO-based light emitters.

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The effect of structural characteristics of ZnO and NiO thin films on the performance of NiO/ZnO photodetectors

Cited by 7 publications

References 55 publications

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Amorphous Silicon Thin-Film Solar Cells on Fabrics as Large-Scale Detectors for Textile Personal Protective Equipment in Active Laser Safety

Electroluminescent MgZnO/ZnO Heterojunction Diode

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