1970
DOI: 10.1016/0036-9748(70)90232-2
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The effect of small concentrations of carbon impurity on dislocation mobility in iron monocrystals

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Cited by 10 publications
(5 citation statements)
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“…Further selective etch experiments in the next decades replicated these results in a vast number of materials, under different temperature ranges and under irradiation conditions [50]. Materials tested in this way include the metals W [51], Fe [44,52], Fe-C [53], Fe-Si [16,54,55], Al [56], Cu [57,58,59,60], irradiated Cu [61], Al-Cu alloys [17,21,57,62], Ni [63], Pb [64], Mg [65], Zn [66,67,68,59,69,70,71,72], Nb [73,74,75], α-Ti [76], In [77], K [52], Mo [65,78,79], Ag [80], and a number of ceramics and semiconductors, including pure Ge [81] and Si [82,83], LiF [48,84,85,86], BeO [87], KCl [88], Na...…”
Section: Experimental Evidencementioning
confidence: 94%
See 1 more Smart Citation
“…Further selective etch experiments in the next decades replicated these results in a vast number of materials, under different temperature ranges and under irradiation conditions [50]. Materials tested in this way include the metals W [51], Fe [44,52], Fe-C [53], Fe-Si [16,54,55], Al [56], Cu [57,58,59,60], irradiated Cu [61], Al-Cu alloys [17,21,57,62], Ni [63], Pb [64], Mg [65], Zn [66,67,68,59,69,70,71,72], Nb [73,74,75], α-Ti [76], In [77], K [52], Mo [65,78,79], Ag [80], and a number of ceramics and semiconductors, including pure Ge [81] and Si [82,83], LiF [48,84,85,86], BeO [87], KCl [88], Na...…”
Section: Experimental Evidencementioning
confidence: 94%
“…Further selective etch experiments in the next decades replicated these results in a vast number of materials, under different temperature ranges and under irradiation conditions [50]. Materials tested in this way include the metals W [51], Fe [44,52], Fe-C [53], Fe-Si [16,54,55], Al [56], Cu [5760], irradiated Cu [61], Al–Cu alloys [17,21,57,62], Ni [63], Pb [64], Mg [65], Zn [59,6672], Nb [7375], α -Ti [76], In [77], K [52], Mo [65,78,79], Ag [80], and a number of ceramics and semiconductors, including pure Ge [81] and Si [82,83], LiF [48,8486], BeO [87], KCl [88], NaCl [89], KBr [90,91], InSb [82,92], GaAs [93], GaSb [82], InP [94], GeSi [95,96]. In Si, particular focus was placed on studying the mobility of dislocations under various temperatures and doping conditions, often with seemingly contradictory results [82,…”
Section: Experimental Evidencementioning
confidence: 99%
“…The Fe and Fe-Cr alloys have different C concentrations (0.0119, 0.0018 and 0.0021 mass% for Fe, Fe-3%Cr and Fe-9%Cr, respectively). Although impurity carbon atoms can pin both edge and screw dislocations, they are not likely to have a significant effect on dislocation motion once the dislocations are unpinned [25,26]. Since the dislocation sources, close to the crack tip, will be subjected to very high stresses, while the initial operation of the sources and the emission of their first dislocation might be slightly inhibited, the continued operation of the source will not.…”
Section: Methodsmentioning
confidence: 99%
“…Dislocation mobility data for the materials tested here are sparse. Data exist only for Fe, and then only for edge dislocations [25]; the DBT is most likely to be controlled by the motion of screw dislocations, which have much lower mobilities than edge dislocations in BCC metals [28].…”
Section: Activation Energies For Dislocation Glidementioning
confidence: 99%
“…[16][17][18] Although a considerable amount of research has been conducted on dislocation mobility and stress-strain response of hydrogenated carbon steels, [26][27][28] there are no detailed experimental reports dividing the three factors.…”
Section: Suppression Mechanism Of Strain-age-hardening In Carbon Steementioning
confidence: 99%