The effect of size on photodiode pinch-off voltage for small pixel CMOS image sensors

Park, Sangsik; Uh, Hyungsoo

doi:10.1016/j.mejo.2008.06.071

Cited by 26 publications

(17 citation statements)

References 3 publications

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“…2). Equation (8) shows that the FWC depends logarithmically on the photon flux [4], [6]. This effect is schematized in Fig.…”

Section: A Fwc Variations As a Function Of Temperature For Differentmentioning

confidence: 97%

“…The pinning voltage, also referred to as pinch-off voltage [8], in analogy to the pinch-off voltage in junction field effect transistors, corresponds to the PPD biasing voltage required to fully deplete the photodiode. It represents a critical design parameter in PPD CIS.…”

Section: Pinning Voltage Temperature Dependencementioning

confidence: 99%

“…To simplify the model in (2) as much as possible, the contribution of the lower p-n junction has been neglected (this can be justified by the fact that the doping concentration of the epitaxy is much lower than the one of the p+ implant). Geometrical effects such as the geometrical modulation of V pin described in [12] or additional 3-D effects such as the ones presented in [8] have also been neglected. The impact of temperature on the geometrical dependence of V pin is left for future studies.…”

Section: Pinning Voltage Temperature Dependencementioning

confidence: 99%

“…Different pinning voltage extraction techniques have been proposed in [8], [13] and [14]. In this paper, V pin has been extracted from the pinning voltage characteristic [13] with the integral method proposed by Goiffon et al in [14].…”

Section: Pinning Voltage Temperature Dependencementioning

confidence: 99%

See 3 more Smart Citations

Temperature Dependence and Dynamic Behavior of Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Pelamatti

Belloir

Messien

et al. 2015

IEEE Trans. Electron Devices

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This paper presents an analytical model of the full well capacity (FWC) in pinned photodiode (PPD) CMOS image sensors. By introducing the temperature dependence of the PPD pinning voltage, the existing model is extended (with respect to previous works) to consider the effect of temperature on the FWC. It is shown, with the support of experimental data, that whereas in dark conditions the FWC increases with temperature, a decrease is observed if FWC measurements are performed under illumination. This paper also shows that after a light pulse, the charge stored in the PPD drops as the PPD tends toward equilibrium. On the basis of these observations, an analytical model of the dynamic behavior of the FWC in noncontinuous illumination conditions is proposed. The model is able to reproduce experimental data over six orders of magnitude of time. Both the static and dynamic models can be useful tools to correctly interpret FWC changes following design variations and to accurately define the operating conditions during device characterizations.Index Terms-Active pixel sensor (APS), analytical modeling, capacitance, CMOS image sensor (CIS), dynamic behavior, full well capacity (FWC), modeling, pinned photodiode (PPD), pinning voltage, temperature.

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“…2). Equation (8) shows that the FWC depends logarithmically on the photon flux [4], [6]. This effect is schematized in Fig.…”

Section: A Fwc Variations As a Function Of Temperature For Differentmentioning

confidence: 97%

Section: Pinning Voltage Temperature Dependencementioning

confidence: 99%