2011
DOI: 10.1016/j.carbon.2010.11.035
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The effect of SiC substrate microstructure and impurities on the phase formation in carbide-derived carbon

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Cited by 11 publications
(9 citation statements)
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“…This is in line with theoretical studies on the chlorination mechanism of silicon carbide published by others [7]. In combination with the advanced simulation model the values can be used to scale up technical reactor systems.…”
Section: Resultssupporting
confidence: 83%
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“…This is in line with theoretical studies on the chlorination mechanism of silicon carbide published by others [7]. In combination with the advanced simulation model the values can be used to scale up technical reactor systems.…”
Section: Resultssupporting
confidence: 83%
“…For dissociative adsorption of the gaseous species chlorine the order is 2. This is in agreement with Ischenko et al who have proposed a possible mechanism for the chlorination of silicon carbide from DFT (density functional theory) calculations using a Si 10 C 9 model cluster [7]. 2.…”
Section: Regression Of a Rate Approach For The Initial Reaction Ratessupporting
confidence: 92%
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“…Hexoloy SA is known to incorporate boron during manufacture as a sintering aid [30,31], although the boron is intended to diffuse into the lattice rather than remain, presumably in the form of boron carbide inclusions as seen in the Hexoloy SA micrographs. It is possible that these inclusions may have influenced the fracture path and/or fragmentation behaviour of the Hexoloy SA.…”
Section: Hexoloy Pore Analysismentioning
confidence: 99%