The effect of relative humidity, temperature and electrical field on leakage currents in piezo-ceramic actuators under dc bias

Lipscomb, I.P.; Weaver, Paul M.; Swingler, Jonathan; McBride, J.W.

doi:10.1016/j.sna.2009.01.017

Cited by 49 publications

(41 citation statements)

References 16 publications

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“…Samples were removed and examined after the resistance of the ceramic had dropped to below 1 MΩ. the progression of the changes in electrical properties is described in more detail elsewhere [10].…”

Section: Methodsmentioning

confidence: 99%

“…The change in ceramic resistance of PZT actuators under temperature-humidity bias testing has been described previously [10]. However the assessment of any internal structural change has not been investigated and is extremely difficult if not impossible to perform using conventional light and electron microscopy procedures without destroying the features under investigation.…”

Section: Methodsmentioning

confidence: 99%

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Micro-computer tomography—An aid in the investigation of structural changes in lead zirconate titanate ceramics after temperature-humidity bias testing

2008

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Lead zirconate titanate ceramic actuators are extensively used in electronic and electro-mechanical devices. Under humid conditions with a d.c. bias leakage currents increase power consumption In some materials the increasing leakage current is accompanied by the evolution of features on the anode surface, but little is known of any changes to the internal structure of the material. This research applies an advanced imaging technique (micro-computer tomography) to non-destructively investigate these features. This allows the evolution of internal features over time to be studied. The findings reveal that the microstructure of the ceramic was significantly altered during environmental testing.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Micro-computer tomography—An aid in the investigation of structural changes in lead zirconate titanate ceramics after temperature-humidity bias testing

2008

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“…A resistance decrease in bulk or thick film Pb-containing perovskites under high field stress is also reported, but mostly refers to experiments under high humidity conditions below 100°C [58][59][60][61][62][63][64][65][66][67]. There, migration of silver (or other) cations originating from the electrodes is often discussed as the major source of the degradation.…”

Section: Introductionmentioning

confidence: 99%

Resistance variation in donor-doped PZT stacks with Cu inner electrodes under high field stress

Völkl¹,

Hillebrand²,

Fleig³

2011

J Electroceram

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Changes of the resistance of donor-doped lead zirconate titanate (PZT) under high voltages were investigated at temperatures from 350 to 500°C in different gas atmospheres. Measurements on individual ceramic layers (about 75 μm thickness) of PZT multilayer stacks with Cu inner electrodes allowed numerous experiments on nominally identical PZT material. Under high fields, the conductivity decreased significantly on time scales much longer than needed for capacitor charging. At 350°C, for example, decay times of several 1000 s were found. The time constant of this conductivity decay depends exponentially on temperature with activation energies of about 1.3 eV in air. After interrupting the field stress, thermally activated (ca. 1.1 eV) relaxation of the conductivity was found on an even longer time scale. The results are interpreted in terms of oxygen vacancy motion under high fields (stoichiometry polarization) and diffusive relaxation. The importance of oxygen migration despite donor doping is attributed to the high PbO volatility of PZT which readily leads to significant oxygen deficiency. Oxygen diffusion coefficients are estimated.

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“…[4][5][6] Second, in devices fabricated from "bulk" piezoelectrics that are processed under ambient atmosphere, humidity can increase the leakage current, inducing an insulator-semiconductor transition. [7][8][9][10][11] To investigate the interplay between hydrogen-related defects and defects resulting from aliovalent acceptor doping, CuO-doped PbTiO 3 has been investigated. As a sensitive spectroscopic tool, electron paramagnetic resonance (EPR) has already been providing detailed information, 12,13 in particular, on the defect structure at the first coordination sphere.…”

mentioning

confidence: 99%

Hydrogen interstitial defects in acceptor-type CuO-doped PbTiO3—Uptake and dissolution of water vapor and formation of (CuTi″−(OH)O•)′ defect complexes

Jakes

Kungl

Schierholz

et al. 2016

Applied Physics Letters

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The defect structure of CuO-doped PbTiO3 has been analyzed using the Hyperfine Sublevel Correlation Experiment to identify hydrogen interstitials. The formation of (CuTi″−(OH)O•)′ defect complexes has been observed, which exist in addition to the (CuTi″−VO••)× complexes. On this basis, modified reorientation characteristics are proposed due to a change in hopping mechanism from an oxygen-vacancy mediated migration mechanism to a proton hopping process. Furthermore, mobile hydrogen interstitials are generated that increase conductivity in terms of a “Grotthuss”-type charge-transport mechanism.

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The effect of relative humidity, temperature and electrical field on leakage currents in piezo-ceramic actuators under dc bias

Cited by 49 publications

References 16 publications

Micro-computer tomography—An aid in the investigation of structural changes in lead zirconate titanate ceramics after temperature-humidity bias testing

Micro-computer tomography—An aid in the investigation of structural changes in lead zirconate titanate ceramics after temperature-humidity bias testing

Resistance variation in donor-doped PZT stacks with Cu inner electrodes under high field stress

Hydrogen interstitial defects in acceptor-type CuO-doped PbTiO3—Uptake and dissolution of water vapor and formation of (CuTi″−(OH)O•)′ defect complexes

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