2013
DOI: 10.1149/2.009311jes
|View full text |Cite
|
Sign up to set email alerts
|

The Effect of Rapid Temperature Annealing with N2and H2on Photoelectrochemical Properties of u-TiO2

Abstract: The effects of annealing with H2 and N2 on the photoelectrochemical (PEC) properties of annealed Nb-doped TiO2 (ann-TNO) film were investigated. The photocurrent density of the ann-TNO film was 2 to 3 orders of magnitude higher than that of u-TiO2 film. To understand this phenomenon, ann-TNO film was investigated by comparing u-TiO2 and Nb-doped TiO2 (TNO) films. An investigation was conducted using Hall effect estimation, photoluminescence (PL) analysis, and band-gap calculation.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2015
2015
2022
2022

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 24 publications
0
3
0
Order By: Relevance
“…Bae et al reported the effect of H 2 and N 2 annealing on significant increase of the photocurrent of annealed Nb-doped TiO 2 [25]. Hall-effect measurements, Photoluminescence (PL), and ultravioletevisible (UVeVis) spectrometry confirmed that the annealing process improved the photocurrent by decreasing the carrier concentration to achieve wider depletion region, the recombination level, and the bandgap energy.…”
Section: Doping With Metal Ionsmentioning
confidence: 99%
See 1 more Smart Citation
“…Bae et al reported the effect of H 2 and N 2 annealing on significant increase of the photocurrent of annealed Nb-doped TiO 2 [25]. Hall-effect measurements, Photoluminescence (PL), and ultravioletevisible (UVeVis) spectrometry confirmed that the annealing process improved the photocurrent by decreasing the carrier concentration to achieve wider depletion region, the recombination level, and the bandgap energy.…”
Section: Doping With Metal Ionsmentioning
confidence: 99%
“…However, the formation of strongly localized d states within the bandgap and the existence of carrier recombination centers significantly decrease the carrier mobility and then reduce the photocurrent [25].…”
Section: Co-dopingmentioning
confidence: 99%
“…17 Creating intrinsic defects such as oxygen vacancies is a novel approach for modifying the metal oxide's optical and electrical properties by increasing donor densities. [18][19][20] There are several methods to introduce the oxygen vacancies in transition metal oxides, including hydrogenation, [21][22][23][24][25][26] thermal annealing in oxygen-deficient environment, [27][28][29] electrochemical reduction, [30][31][32] chemical reduction, 33,34 partial oxidation, 35,36 and flamereduction method. [37][38][39][40] Khan et al 38 synthesized the TiO 2 by flame-treatment of titanium metal substrates using natural gas.…”
Section: Introductionmentioning
confidence: 99%