2005
DOI: 10.1016/j.surfcoat.2004.08.134
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The effect of r.f. substrate bias on the properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition

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Cited by 10 publications
(9 citation statements)
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“…With the increase of bias voltage, the hardness increases initially and then decreases. Based on the fact that both ratio x(sp 2 )/x(sp 3 ) and x(sp 2 C\N)/x(sp 3 C\N) follow exactly the opposite trend, we can conclude that the decrease of the ratio x(sp 2 )/x(sp 3 ) and x(sp 2 C\N)/x(sp 3 C\N) makes a significant contribution to improving the hardness of CN x films [25][26][27]. The correspondence between bonding configuration and nanoindentation hardness can be explained by the formula H~(E b × a c ) / d 2 (the hardness defined by the product of binding energy E b and the covalency a c divided by the square of bond length d) [46].…”
Section: Composition and Chemical Structurementioning
confidence: 73%
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“…With the increase of bias voltage, the hardness increases initially and then decreases. Based on the fact that both ratio x(sp 2 )/x(sp 3 ) and x(sp 2 C\N)/x(sp 3 C\N) follow exactly the opposite trend, we can conclude that the decrease of the ratio x(sp 2 )/x(sp 3 ) and x(sp 2 C\N)/x(sp 3 C\N) makes a significant contribution to improving the hardness of CN x films [25][26][27]. The correspondence between bonding configuration and nanoindentation hardness can be explained by the formula H~(E b × a c ) / d 2 (the hardness defined by the product of binding energy E b and the covalency a c divided by the square of bond length d) [46].…”
Section: Composition and Chemical Structurementioning
confidence: 73%
“…The results show that the bias voltage dramatically affects the bonding configuration of carbon with/or nitrogen in the films [26,27]. Consequently, by combining a negative bias voltage and the PLD technique, we can expect to alter efficiently the bonding configuration of the CN x films deposited with carbon nitride target.…”
Section: Introductionmentioning
confidence: 99%
“…Bias geriliminin 300V değerine artırılmasıyla bu sefer kaplama kalınlığının 750nm değerine düştüğü görülmektedir. Bu durumun ise bahse konu olan bias gerilimi değerinin plazmada bulunan iyonların oldukça yüksek enerjili olarak taban malzeme üzerine yönlendirerek, daha önce biriken kaplamayı tekrar yerinden geriye sıçratmasıyla (re-sputtering) ilgili olduğu düşünülmektedir [20][21][22]. Şekil 4.…”
Section: Morfolojik İncelemelerunclassified
“…Specific plasma discharge configurations and customized plasma reactors are required in order to extract the ions of interest from the plasma and to bring them into the inner part of the metallic mini-tubes. For this reason, a bias voltage was applied to the substrate in order to extend the path length of the ions to the full mini-tube length [21][22][23][24][25]. As the fluorocarbon films are deposited using a pulsed discharge, constant bias values were selected.…”
Section: Introductionmentioning
confidence: 99%