The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

Enhancement of Dielectric Characteristics of Polyvinyl Alcohol (PVA) Interfacial Layer in Au/PVA/n‐Si Structures by Bi2O3Disperse

“…[1][2][3][4][5] Generally, polymeric materials are used extensively as interfacial layer material in metal-organic polymerssemiconductor (MPS) and similar structures due to their optical and electrical properties in the study area of Schottky diodes, photodiodes, solar cells, light emitting diodes, thin film transistors, sensors, and so forth. [1][2][3][4][5] Generally, polymeric materials are used extensively as interfacial layer material in metal-organic polymerssemiconductor (MPS) and similar structures due to their optical and electrical properties in the study area of Schottky diodes, photodiodes, solar cells, light emitting diodes, thin film transistors, sensors, and so forth.…”

“…18 The roomtemperature monoclinic a-Bi 2 O 3 transforms upon heating 729°C to the high-temperature cubic d-Bi 2 O 3 , which is stable up to the melting point at 825°C. 1,14 The properties mentioned above have made Bi 2 O 3 suitable for various applications such as electrical ceramics, solid-state electrolytes, superconductors, optical coatings, photovoltaic cells, photodiodes, microwave integrated circuits, fuel cells, oxygen sensors, and oxygen pumps. Usually, these phases transform into a-Bi 2 O 3 on further cooling.…”

“…Usually, these phases transform into a-Bi 2 O 3 on further cooling. In previous studies, 1,19,20 PVA nanofibers, which have Bi 2 O 3 crystalline form, were obtained by dispersing bismuth (III) acetate into PVA and electro spraying PVA solution on the semiconductor. Due to the predominance of certain phase, which depends on preparation technology, the electrical conductivity of Bi 2 O 3 may change by five orders of magnitude, while its band gap may change from 2 to 3.96 eV.…”

“…15 Each phase shows different chemical and physical properties. For example, in our previous study, 1 it was investigated that the effects of interfacial PVA (Bi 2 O 3 -dispersed) interfacial layer on main electrical parameters by Au/n-Si structures with and without interfacial PVA (Bi 2 O 3 -dispersed) layer in the form of a Schottky diode. 1,14 The properties mentioned above have made Bi 2 O 3 suitable for various applications such as electrical ceramics, solid-state electrolytes, superconductors, optical coatings, photovoltaic cells, photodiodes, microwave integrated circuits, fuel cells, oxygen sensors, and oxygen pumps.…”

“…Besides the electrical characteristics, dielectric properties of polymer materials play an important role in device applications such as high performance capacitors, electrical cable insulation, and electronic packing. [1][2][3][4][5] Generally, polymeric materials are used extensively as interfacial layer material in metal-organic polymerssemiconductor (MPS) and similar structures due to their optical and electrical properties in the study area of Schottky diodes, photodiodes, solar cells, light emitting diodes, thin film transistors, sensors, and so forth. [1][2][3][4][5][6][7][8][9][10] Polyvinyl alcohol (PVA) is semicrystalline, water-soluble with low electrical conductivity polymer and widely used as fiber mats, films, paper coatings, membranes, and so on, due to its excellent chemical and physical properties, nontoxicity, processability, good chemical resistance, wide range of crystallinity, and good film formation capacity.…”