The effect of process parameters on dc self-bias voltage in reactive ion etching of GaAs using CH4/H2

Sahafi, H.F.; Webb, A.P.; Carter, M.A.; Goldspink, G.F.

doi:10.1016/0026-2692(94)90159-7

Cited by 1 publication

(2 citation statements)

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“…Sahafi et al reported that the self-bias voltage of RIE dominates the etching process, which is related to the pressure, RF power, and chamber atmosphere. Usually, the ion flux drifts toward the cathode after being accelerated by the self-bias voltage.…”

Section: Resultsmentioning

confidence: 99%

“…In contrast, the conical SWSs with a height of ∼400 nm were obtained, when the self-bias voltage increased from 280 to 420 V by separating the earth frame from the sample stage, while maintaining other parameters constant (Figure 4e). Sahafi et al 44 reported that the self-bias voltage of RIE dominates the etching process, which is related to the pressure, RF power, and chamber atmosphere. Usually, the ion flux drifts toward the cathode after being accelerated by the self-bias voltage.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Enhanced Transmission from Visible to Terahertz in ZnTe Crystals with Scalable Subwavelength Structures

Sun

Liu

Zhou

et al. 2021

ACS Appl. Mater. Interfaces

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The zinc blend nonlinear crystal of zinc telluride (ZnTe) is currently one of the most commonly used electro-optical material for terahertz (THz) probe and imaging. We report herein how to engineer the surface behavior of a ZnTe single crystal to design subwavelength structures (SWSs) for enhancing ultrabroadband transmission. Polystyrene (PS) nanoparticle monolayers with a maximum coverage of 85.2% were produced on the ZnTe crystal by an eccentric spin-coating technique combined with surface wettability engineering. Subsequently, the well-defined conical SWS arrays were fabricated on the ZnTe crystal by reactive ion etching over the PS monolayer template, with the size of the SWS arrays customized by optimizing the etching process. Finally, we demonstrated ultrabroadband antireflection on the surface structured ZnTe crystals in the visible-near-infrared, infrared, and terahertz regions with transmittance increase of 11.6%, 10.0%, and 24.8%, which are attributed to the decrease of surface Fresnel reflection by SWS. Notably, in 0.2–1.0 THz, the transmittance reached over 70%. Our work provides a new strategy to enhance the THz generation efficiency and detection sensitivity based on ZnTe crystals by surface engineering.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%