The Effect of Process Parameters on Electrical Properties of High Density Through-Si Vias

Leduc, P.; Assous, M.; Bouchu, D.; Roman, A.; Heitzmann, M.; Charlet, B.; DiCioccio, L.; Zussy, M.; Mage, L.; Vandroux, L.; Deronzier, Emmanuel; Roule, A.; Haumesser, Paul‐Henri; Sillon, N.

doi:10.1557/proc-1112-e03-03

Cited by 3 publications

(2 citation statements)

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“…Other strategies are being explored to pursue device miniaturization. Among them, a promising approach consists in stacking several chips on top of each other to increase the complexity of the device without compromising its compactness [113][114][115]. In this architecture, a major challenge is the deposition of thin and continuous metallic layers in Through Silicon Vias (TSVs), the vertical holes interconnecting neighbouring levels.…”

Section: Further and Future Applicationsmentioning

confidence: 99%

Ruthenium Nanoparticles in Ionic Liquids – A Saga

Campbell

Prechtl²,

Santini³

et al. 2013

COC

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Ionic liquids (ILs) are excellent media for the generation and stabilisation of metallic nanoparticles (NPs). Their ionic character coupled with 3-D structural pre-organisation in the liquid state, serves to direct the growth of transition metal NPs generated in situ, and to subsequently protect and stabilise them. Until now, many different NPs have been successfully synthesised within these media, however much attention has been paid to Ru-NPs. These have been prepared with small sizes and narrow size distributions by reduction of organometallic compounds with molecular hydrogen as well as decomposition of transition-metal complexes in the zero-valent state. These stable Ru-NPs immobilised in the ILs have proven to be efficient green catalysts for several reactions in multiphase conditions, including important energy-related processes such as biomass refinement. Furthermore, they present potential novel materials for use in the production of smarter electronic devices. In this review, the synthesis, stabilisation and size-control of Ru-NPs via various methods in different ILs is discussed, followed by their varied application in catalysis and potential in new fields.

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Section: Further and Future Applicationsmentioning

confidence: 99%

Ruthenium Nanoparticles in Ionic Liquids – A Saga

Campbell

Prechtl²,

Santini³

et al. 2013

COC

Self Cite

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“…The technology is based on a stack of two silicon wafers using Direct Bonding technology [12]. A 200 mm wafer with one Cu damascene level (M BOT ) is bonded face down on a Si bulk carrier using SiO 2 bonding, and thinned down to 15 µm.…”

Section: Technologymentioning

confidence: 99%

Electromigration behavior of 3D-IC TSV interconnects

Frank

Moreau

Chappaz

et al. 2012

2012 IEEE 62nd Electronic Components and Technology Conference

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The electromigration (EM) behavior of Through Silicon Via (TSV) interconnects used for 3D integration is studied. Impact of the TSV section size on EM lifetime and consideration of increasing metal level thickness are reported. Void nucleates and grows right after TSV, in the adjacent metal level. The TSV section size at metal level interface is critical for high EM performance. Thickness increase of metal level is revealed to not directly increase EM robustness, since irregular void nucleation and growth impact expected performances. Introduction3D integrated circuits based on TSV interconnects have become realistic approaches, increasing performances thanks to higher bandwidth [1, 2]. Regarding recent advances in TSV processes maturity, reliability investigation becomes critical to maximize performances, and especially to enable high current demands through the stacked package. Maximal direct current is given by the ageing of metallization under électromigration (EM) phenomenon, which is the movement of metal atoms, in response to current density. At interfaces of atoms flux divergences, EM leads to latencies accumulation and therefore to open circuit failure. Recent papers studied EM concerns at TSV interfaces, through simulation [3 -5], and also through first experimental approaches [6 -8].

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