2021
DOI: 10.1016/j.jallcom.2021.159782
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The effect of powder pre-treatment on the mechanical and thermoelectric properties of spark plasma sintered N-type bismuth telluride

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Cited by 6 publications
(3 citation statements)
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“…174 The microwave technique was also adopted to synthesize thermoelectric nanopowders of a Bi 2−x Sb x Te 3 system. A unique transition was observed from p-to n-type semiconducting with ZT values of 1.04 and 0.4, respectively, for the n and p types at 448 K. 175 Ahmed et al 176 used spark plasma sintering for the preparation of n-type (Bi 0.95 Sb 0.05 ) 2 (Se 0.05 Te 0.95 ). The Seebeck coefficient was found to increase by 12% relative to the sample prepared by dry conditioning.…”
Section: Thermoelectric Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…174 The microwave technique was also adopted to synthesize thermoelectric nanopowders of a Bi 2−x Sb x Te 3 system. A unique transition was observed from p-to n-type semiconducting with ZT values of 1.04 and 0.4, respectively, for the n and p types at 448 K. 175 Ahmed et al 176 used spark plasma sintering for the preparation of n-type (Bi 0.95 Sb 0.05 ) 2 (Se 0.05 Te 0.95 ). The Seebeck coefficient was found to increase by 12% relative to the sample prepared by dry conditioning.…”
Section: Thermoelectric Propertiesmentioning
confidence: 99%
“…The dopant elements indium, tin, antimony (cations), and Copyright (2021) with permission from Elsevier. 176 selenium and tellurium (anions) were selected based on their ionic radius and the similar properties of their outer shells. Sn, In, and Sb are known to be unique cases of resonant impurities in Bi 2 Te 3 and Bi 2 Se 3 semiconductors.…”
Section: Effect Of Point Defect and Effective Mass (M * ) On Carrier ...mentioning
confidence: 99%
“…However, when Bi 2 Te 3 is oxidized, oxygen atoms replace Te 2 in the quintuple layer (-Te 1 -Bi-Te 2 -Bi-Te 1 -) and act as donors to increase the n, which is the primary reason for the Seebeck coefficient to decrease. Moreover, the defects induced by oxidation would enhance carrier scattering and thus reduce the μ [124][125][126][127], which would ultimately deteriorate The TE performance. Therefore, it is important to prevent oxidation during the ED process.…”
Section: Oxidation Preventionmentioning
confidence: 99%