The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system

Nam, Phil-Ouk; Son, Seung-Suk; Yi, Kyongsu

doi:10.1016/j.jcrysgro.2010.01.013

Cited by 10 publications

(2 citation statements)

References 5 publications

(9 reference statements)

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“…With the trend to n‐type solar cells, continuously recharged CZ (CCZ) is reconsidered. Principally, there are two different methods for melt replenishment (Fig.…”

Section: Ccz Technologymentioning

confidence: 99%

FZ and CZ crystal growth: Cost driving factors and new perspectives

Ammon¹

2014

Phys. Status Solidi A

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In the field of monosilicon crystal growth, the Czochralski (CZ) as well as the floating zone (FZ) method have grown to a mature technology over the last 60 years and, until today, the costs have been continuously reduced. The cost driving factors for CZ and FZ are reviewed with respect to further potential improvements. Generally, the cost for the feedstock material is still dominanting the cost of ownership for both methods despite the dramtic decrease of the poly silicon price over the last years. This is particularly true for FZ where notably more than 50% of the production costs are related to the polysilicon feed rods which are much more expensive as compared to the chunk polysilicon as used for CZ. As a consequence, the FZ method is only used for applications where silicon crystals with very low oxygen concentration are required. Due to the strong influence of the feedstock material on cost, the main focus of the development work has been on the increase of crystal yield and the identification of factors impacting the yield. However, for most electronic and, in particular, for solar application, the crystal yield has reached a level where significant improvements cannot be expected anymore. With the potential change from p-to n-type silicon in the solar industry, previously developed techniques, like continuously recharged CZ, which were finally stopped for electronic applications, are reconsidered and will be discussed with respect to their future potential. Special attention will be given to the advantages and disadvantages of the FZ method. It will be shown that most of the current drawbacks of FZ can be remedied by a new technique which avoids the use of expensive polysilicon feed rods and enables the FZ method to grow dislocation free crystals with inexpensive silicon granules.

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“…With the trend to n‐type solar cells, continuously recharged CZ (CCZ) is reconsidered. Principally, there are two different methods for melt replenishment (Fig.…”

Section: Ccz Technologymentioning

confidence: 99%

FZ and CZ crystal growth: Cost driving factors and new perspectives

Ammon¹

2014

Phys. Status Solidi A

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“…Such "model experiments" are, therefore, predestined for the validation of numerical simulation and are of growing interest, e.g. for investigation of flow phenomena [8][9][10], process control [11,12], or phase boundary stability [13]. Within the NEMOCRYS (Next Generation Multiphysical Models for Crystal Growth Processes) project, we are developing a new generation of multiphysical models [14,15] and model experiments for crystal growth processes, where multiple physical phenomena can be observed simultaneously and hence validated in a coupled manner.…”

Section: Introductionmentioning

confidence: 99%

Model experiments for Czochralski crystal growth processes using inductive and resistive heating

Enders-Seidlitz

Pal

Dadzis

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The Czochralski (CZ) growth technique is widely applied in crystal growth, using both induction and resistance heaters. In this work, a novel model experiment platform with comprehensive in-situ measurement capability is introduced. Growth experiments with the model material tin applying both heating concepts are performed and analyzed, e.g., in terms of the maximum achievable crystal diameter. Strong asymmetries in the magnetic field of the induction heater are measured and temperature distribution on the resistance heater is found to be non-uniform. Furthermore, significant losses are observed in the power supplies of the resistance heater. The heating efficiency of both concepts is compared considering different insulation geometries. The obtained results show the capability of model experiments for design optimization and will provide valuable input for further validation of numerical simulations.

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Model Experiments for Flow Phenomena in Crystal Growth

Dadzis

Pätzold

Gerbeth

2019

Crystal Research and Technology

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The concept of a physical model experiment is introduced and discussed in the context of melt and gas flows in bulk crystal growth processes. Such experiments allow one to "extract" selected physical phenomena from the full complexity of a real crystal growth process and "transfer" them to material systems with an easier access for experimental measurements. Model experiments for the main techniques of melt growth are summarized in a literature review, and the applicability of the results to real crystal growth systems is analyzed. Recent examples of model experiments for melt and gas flows in Czochralski growth of silicon are used to demonstrate the state of the art and show the potential of such experiments to improve the understanding of complex multi-physical multi-scale phenomena occurring in every crystal growth process.

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The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system

Cited by 10 publications

References 5 publications

FZ and CZ crystal growth: Cost driving factors and new perspectives

FZ and CZ crystal growth: Cost driving factors and new perspectives

Model experiments for Czochralski crystal growth processes using inductive and resistive heating

Model Experiments for Flow Phenomena in Crystal Growth

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