The effect of plasma density on the deposition and ion implantation to the materials with three-dimensional topologies in metal d.c. plasma-based ion implantation

Yukimura, Ken; Sano, M.; Teramoto, Tomoyuki; Maruyama, Toshiro

doi:10.1016/s0257-8972(00)00787-8

Cited by 7 publications

(1 citation statement)

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“…The new materials used to the MOS device are in more urgent needs of developed processing. New applications of nitrides compounded of transitional elements, such as ZrN, TiN, HfN, and TaN, become an important subject [1][2][3][4][5][6][7][8]. Their advantage properties including anti-wearing, low resistivity, low diffusion coefficient and dielectric constant, are very suitable as the layer for diffusion barriers of Cu metallization to obstruct the chemical reaction between semiconductor materials and metals [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Effect Analysis of Ar-N2 Flow Rates on ZrNX Film by Pulsed Magnetron Sputtering Using Design of Experimental Method

Wen

Chang

et al. 2011

AMR

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The various nitrogen gas (N2) flows for depositing zirconium-nitride (ZrN) films on the substrate of a p-type (100) silicon wafer are investigated through reactive magnetron sputtering by a pulsed-DC power. The results, based on the design of experimental (DOE) method, indicate that the deposition effect of the ZrNx film is obviously affected by various flow rates of nitrogen gas at the specific pulsing duty cycles. The crystal orientation of the zirconium-nitride film has a less order microstructure which is similar to an amorphous microstructure. Although the composition ratio of chemical elements is not identical in Zr and N, the surface roughness, grain size, and resistivity are the better feature. The deposition rate is inversely proportional to the nitrogen flow rate and the chamber pressure is also an important factor. The basic effect of N2 flow rate on the surface roughness is rougher when more nitrogen gas is supplied. The resistivity of ZrNx thin film has a positive relationship to N2 flow rates at the reactive vacuum chamber.

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