Polycrystalline CuInSe2 (CIS) thin films have been prepared by low-cost electrochemical method from non-aqueous ethylene glycol solvent onto cadmium sulfide (CdS) thin films. The codeposition potential for Cu, In and Se was optimized with cyclic voltammetry measurements. CIS layers were electrodeposited at -1.1, -1.3 and -1.5 V versus Ag/AgCl references in air-tight custom made electrodeposition cell. The films were selenized at 400 °C for 20 minutes. The optical, structural, morphological, compositional and optoelectronic properties of as-prepared and selenized samples were studied using UV-Vis spectrophotometer, X-ray diffractometer, Transmission electron microscopy (TEM), Scanning electron microscope (SEM), Energy dispersive x-ray analysis (EDAX) and current-voltage (I-V) measurements. Three prominent sharp peaks of tetragonal CIS, (112), (204)/(220), and (312/116) were revealed in all asprepared and selenized samples. Upon selenization the crystallinity of the samples was found to be improved remarkably. Compact, void free, and nearly uniform thin films of grain size ~ 1 µm were deposited. The as-deposited and selenized CIS samples were Cu-rich whereas the contents of Se was ~ 50% obtained by EDAX analysis. The value of inter-planer distance, d = 3.339 Å was measured by HRTEM corresponds to (112) plane of tetragonal CIS crystal structure. The circular spotted rings observed in selected area diffraction (SAD) pattern were confirmed (112), (204)/(220) and (312)/(116) reflections of CIS. The solar cell parameters, Voc, Jsc, FF and efficiency were found to be 303 mV, 28 mA/cm 2 and FF ~ 53 % and η = 4.5 % for the CIS film deposited at -1.5 V. The values of shunt conductance, GD = 2.5 mS/cm 2 and GL = 7.9 mS/cm 2 and series resistance, RD = 0.81 Ωcm 2 and RL = 0.19 Ωcm 2 were calculated for dark and illuminated conditions. Mott-Schottky analysis is also carried out on the final solar cell in dark and illuminated condition to study the carrier concentration and defects in the CdS/CIS interface.