The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

“…However, mobility decreases due to larger dislocation density if the Al content exceeds ̴ 30% in the barrier layer [15,16]. Many studies have been conducted in the literature to enhance mobility and carrier density in the AlGaN/GaN heterostructures [17][18][19][20]. Kuzmik suggested AlInN as an alternative barrier layer, which leads to higher 2DEG density due to stronger polarization.…”