The effect of oxygen on the N2 photofixation ability over N vacancies embedded g-C3N4 prepared by dielectric barrier discharge plasma treatment

Recent advances in photocatalytic nitrogen fixation: from active sites to ammonia quantification methods

“…For instance, Zhao et al employed dielectric barrier discharge plasma treatment to prepared N vacancies embedded g-C 3 N 4 (Nv-CN). 86 In the atmosphere of 50% N 2 and 50% O 2 , the nitrogen xation rate reaches 5.5 mg L À1 h À1 g cat À1 under visible light.…”

Photocatalytic Fixation of Molecular Nitrogen in Systems Based on Graphite-Like Carbon Nitride: a Review

“…The plasma treatment of bulk g-C 3 N 4 synthesized by urea pyrolysis led to the formation of nitrogen vacancies. The latter did not change the structure, specific surface area, and morphology of the photocatalyst but affected significantly the efficiency of nitrogen photo-fixation in methanol as a hole acceptor [84]. It was found that the NH 4 + formation rate involving V N -g-C 3 N 4 composite was higher in a mixture of 50% of N 2 and 50% of O 2 (2.75 mg/h×g PC ) than in pure nitrogen (1.3 mg/h×g PC ) (Table 1).…”

A minireview on catalysts for photocatalytic N2 fixation to synthesize ammonia

“…In their work, a N decient g-C 3 N 4 catalyst was prepared by the dielectric barrier discharge plasma treatment method, which displayed a NH 3 production rate of 161.8 mmol g À1 h À1 . 41 Mechanism exploration disclosed that N 2 was activated via the two-path analogous Mar-van Krevelen mechanism. 41 Oxygen vacancies on oxide semiconductors are active centers for N 2 adsorption and capable of activating N 2 .…”