The effect of oxygen content on the electrical characteristics of ZnO

Abstract

This work presents the influence of the variation of oxygen content in the ZnO films on their electrical characteristics. We applied the post-thermal annealing in N 2 and air ambient to control the oxygen content of ZnO films, which improved crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy and the electrical characteristics were obtained by Hall measurement in the van der Pauw configuration and transmission line method. As result, it was shown that the electron concentration varies from 10 16 to 10 21 /cm 3 , while the resistivity from 10 -3 to tens ohm-cm with respect to Zn/O concentration ratio.

A Comparative Ab Initio Thermodynamic Study of Oxygen Vacancies in ZnO and SrTiO3: Emphasis on Phonon Contribution

“…The oxygen vacancy is a very common defect in these and related materials, controlling mass transport and other device properties, e.g. permeation membranes and solid oxide fuel cell cathodes. − The two oxides are very different with respect to their dielectric properties. SrTiO 3 is an incipient ferroelectric material with extremely high dielectric constant (the values of the order 10 4 were reported at low temperatures) related to the soft phonon mode behavior with temperature.…”

Al/Au ohmic contact to n-ZnO by dc sputtering

“…The ZnO semiconductor has attracted considerable attention for optoelectronic applications, such as light-emitting diodes (LEDs), laser diodes (LDs), and solar cells, because of its wide bandgap of 3.37 eV and a large exciton binding energy of 60 meV [1][2][3][4][5]. In addition, it has thermal and chemical stability in an air ambient.…”