The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/ InGaAs avalanche photodiodes

Abstract-Exact gain distributions and electron counting distributions are presented for superlattice avalanche photodiodes that operate by single-carrier transport perpendicular to the superlattice planes. The characteristic shapes of these distributions are compared with those of the single-carrier conventional avalanche photodiode and the photomultiplier tube. The electron counting distributions, which assume Poisson photocarrier injection, are used to calculate the error performance of a simple optical communication system. This performance is compared with that achievable by a single-carrier conventional APD receiver of identical quantum efficiency and gain. For simplicity of calculation, the system consists of a transmitter emitting light pulses containing a Poisson number sf photons and a maximum-likelihood integrate-and-dump receiver. It makes use of binary on-off keying and is subject to noise events arising from multiplied background radiation andlor multiplied dark noise. The performance of the superlattice photodiode receiver turns out to be always superior to that of the singlecarrier conventional photodiode receiver, for all values of the gain. The advantage can attain several orders of magnitude (even though the excess noise factors for the two devices lie within a factor of two). The superlattice receiver with high impact-ionization probability is shown to behave like an ideal photon counter with the same quantum efficiency, even if the device has many stages. The deleterious effects of receiver thermal noise on probability of error are examined.

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“…The consequences of non-Poisson photon excitation could be calculated. The effects of nonuniform APD gain [65] could also be considered.…”

Section: Discussionmentioning

confidence: 99%

Counting distributions and error probabilities for optical receivers incorporating superlattice avalanche photodiodes

Teich

Matsuo²,

Saleh

1986

IEEE Trans. Electron Devices

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“…When only the holes are multiplied in the multiplication layer, the noise factor can be calculated according to the formula [15]:…”

Section: Apd Noise Characteristicsmentioning

confidence: 99%

Photosensitivity and noise of ultrafast InGaAs/InP avalanche photodiodes

Matukas¹

2006

Lithuanian J. Phys.

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A detailed investigation of photosensitivity and noise characteristics of ultrafast InGaAs / InP avalanche photodiodes with separate absorption, grading, charge, and multiplication regions was carried out. Carrier multiplication and noise factors were evaluated, and influence of the ionizing radiation to the avalanche photodiode operation quality was investigated. Carrier multiplication and noise factors can be correctly evaluated only if input light beam is well focused to the active photodiode area since the peripheral area is quite sensitive to the infrared radiation, too. Photodiode irradiation by X-ray radiation can lower the defect density in the device structure or create new defects depending on radiation power and duration. Noise characteristics not only clarify fundamental physical processes in avalanche photodiode structure, but also indicate the presence and appearance of defects in the devices.

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“…For the SAGM APD structure this change in the width of the multiplication region must be accompanied by an increase in the carrier concentration to avoid excess dark current [86]. In the extreme, this can limit the maximum usable gain and degrade the receiver sensitivity [120]. The flattening out of the bandwidth at lower gains can be caused by either the RC time constant, hole trapping, or the transit times.…”

Section: • Semiconductor Laser Sources and Photodetectorsmentioning

confidence: 99%

Optoelectronic Technology and Lightwave Communications Systems

Lin¹

1989

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The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/ InGaAs avalanche photodiodes

Cited by 14 publications

References 17 publications

Counting distributions and error probabilities for optical receivers incorporating superlattice avalanche photodiodes

Counting distributions and error probabilities for optical receivers incorporating superlattice avalanche photodiodes

Photosensitivity and noise of ultrafast InGaAs/InP avalanche photodiodes

Optoelectronic Technology and Lightwave Communications Systems

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