2014
DOI: 10.1016/j.apsusc.2014.06.137
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The effect of nitrogen incorporation in DLC films deposited by ECR Microwave Plasma CVD

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Cited by 58 publications
(18 citation statements)
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“…Similar results were reported by other researchers [106,107] Si-DLC XPS C1s spectra are indicated in Figure 4 Figure 4.23, It has been found that Si-C content increases by increasing the target bias and the peaks of SDLC-400 are more symmetric and centered around 101 eV while the peaks of SDLC-800 are more asymmetrical with higher shift shoulder [109,110]. attributed to transition of C1s electrons to σ * , sp 3 C-C, bonds [111].…”
Section: Raman Spectroscopysupporting
confidence: 78%
“…Similar results were reported by other researchers [106,107] Si-DLC XPS C1s spectra are indicated in Figure 4 Figure 4.23, It has been found that Si-C content increases by increasing the target bias and the peaks of SDLC-400 are more symmetric and centered around 101 eV while the peaks of SDLC-800 are more asymmetrical with higher shift shoulder [109,110]. attributed to transition of C1s electrons to σ * , sp 3 C-C, bonds [111].…”
Section: Raman Spectroscopysupporting
confidence: 78%
“…This shows that one of the effects of nitrogen incorporation in DLC film structure is the increase in sp 2 bonded carbon. [7] In the DLC film (sample 1), the D peak is centered at 1338 cm À1 . After the incorporation of nitrogen in the film, the D peak shifts to 1396 cm À1 , as can be observed in Raman spectra of sample 2.…”
Section: Raman Analysismentioning
confidence: 99%
“…[2,6] In order to improve such properties, many authors have investigated the DLC doping with elements such as B, N and transition metals. [7,8] Kopustinskas et al produced hydrogenated amorphous carbon nitride (α-CN x :H) films (100-200 nm) by electrostatic ion sources from C 6 H 14 + H 2 + N 2 gas mixtures on Si(100) substrates. They observed that the increase of N 2 concentration in the gas mixture resulted in a decrease of growth rate, refractive index, sp 3 bonding and formation of the more graphite-like α-CN x :H films.…”
Section: Introductionmentioning
confidence: 99%
“…The incorporation of different elements during the film growth is a significant method used to improve the properties of the film. For example, nitrogen incorporation improves the hardness of the film, while fluorine incorporation results in good hemocompatibility and antibacterial activity [8][9][10]. Deuterated amorphous carbon films (a-C:D) deposited by plasma-assisted chemical vapor deposition (PECVD) using deuterium as the precursor gas were also investigated for some specific applications, such as ultra-cold neutron storage devices or neutron mirrors [11,12].…”
Section: Introductionmentioning
confidence: 99%