The effect of nitrogen doping and heat treatment on electrical resistivity of CVD SiC bulks

Abstract

With the expansion of chip size, the challenge of achieving uniform etching becomes progressively more formidable. The implementation of CVD SiC etching rings not only enhances etching uniformity effectively, but also offers notable attributes of high purity and prolonged operational lifespan. To cater to diverse processes and equipment requirements, it is essential to control the resistivity of CVD SiC etching rings. This investigation delves into the impact of nitrogen doping and heat treatment on the resistivity of CVD SiC bulks. Elevated nitrogen doping results in a heightened carrier concentration within CVD SiC. In cases of modest doping, the height of the grain boundary barrier escalates in tandem with the doping concentration. However, in instances of higher doping concentrations, the grain boundary barrier diminishes with increasing doping concentration. Following heat treatment, there is a rise in the carrier concentration of the sample. Nonetheless, the surge in sample porosity precipitates a reduction in migration rate, consequently yielding minimal variance in resistivity before and after heat treatment.