1997
DOI: 10.1002/bbpc.199700026
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The Effect of Ion Size on Solution Mechanism and Defect Cluster Geometry

Abstract: Atomistic simulation calculations are used to predict the solution mechanisms and the defect cluster geometries of: M2+ dopant cations in Y2O3, M3+ dopant cations in CoO and M2+ dopant cations in SrTiO3. The interatomic potential parameters were derived by simultaneously fitting the properties of a range of mixed cation materials. The results suggest that although both solution enthalpies and cluster binding energies do scale with ionic radius, the relationships can be quite complex, materials specific and wil… Show more

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Cited by 64 publications
(47 citation statements)
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“…The efficacy of the parameters used has been established for Pr 2 NiO 4 as the calculated unit cell volume is within 0.74% of the determined value (maximum percent difference of the lattice parameters is 1.75%), 5 whereas the oxygen-oxygen interaction has been successfully used in a number of oxides. [10][11][12] Initial configurations for a given stoichiometry were created from a 10 Â 10 Â 4 supercell of the experimentally determined structure of Pr 2 NiO 4+d . Additional oxygen ions were assigned at a random sample of interstitial sites within the crystal, the This journal is c the Owner Societies 2010 PAPER www.rsc.org/pccp | Physical Chemistry Chemical Physics total number of ions in the simulations were therefore 5600 + 800d for a particular stoichiometry.…”
Section: Methodsmentioning
confidence: 99%
“…The efficacy of the parameters used has been established for Pr 2 NiO 4 as the calculated unit cell volume is within 0.74% of the determined value (maximum percent difference of the lattice parameters is 1.75%), 5 whereas the oxygen-oxygen interaction has been successfully used in a number of oxides. [10][11][12] Initial configurations for a given stoichiometry were created from a 10 Â 10 Â 4 supercell of the experimentally determined structure of Pr 2 NiO 4+d . Additional oxygen ions were assigned at a random sample of interstitial sites within the crystal, the This journal is c the Owner Societies 2010 PAPER www.rsc.org/pccp | Physical Chemistry Chemical Physics total number of ions in the simulations were therefore 5600 + 800d for a particular stoichiometry.…”
Section: Methodsmentioning
confidence: 99%
“…the energy barriers for diffusion) [16][17][18][19]. Controlling point defects such as vacancies is important for semiconductors, superconductors, and oxides [20][21][22][23][24][25][26][27][28]. A way to defect engineer the concentration and clustering of point defects in the anion sublattice (for example oxygen vacancies) is via the introduction of dopants.…”
mentioning
confidence: 99%
“…The convergence criteria for geometry optimization are: the difference in total energy per atom within 5 9 10 -6 eV, the ionic Hellmann-Feynman forces within 0.01 eV/Å , maximum stress within 0.02 GPa, and the maximum ionic displacement within 5 9 10 -4 Å . The effectiveness of atomistic simulations to explain defect processes has been discussed in early studies [41][42][43][44][45][46][47][48]. Table 1.…”
Section: Methodsmentioning
confidence: 99%