The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector

Abstract

The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/Al x Ga 1−x As which is an active region of quantum cascade detector. It is established that independently of the temperature, the energy of quantum transition during the process of electromagnetic field absorption is a nonlinear weakly varying function of the position of the inner barrier with respect to the outer barriers of the structure.

Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures

“…where the second term describes the energy, corresponds to the movement of the electron in the direction perpendicular to the axis (in the plane), and the correlated in-plane effective mass of the electron (eff) for Γ-conduction subband is obtained taking into account (2.1). It provides the approximation of the contribution of all the nanostructure layers [21,22]:…”

“…where r0 and k are the vector in 𝑥𝑂𝑦 plane and the quasimomentum of the electron, respectively. Separation of the motion of an electron in the direction along the 𝑂𝑧 axis from its motion in the plane 𝑥𝑂𝑦 is performed taking into account relation (2.2), as it was fulfilled, for example, in papers [21,22]. The stationary spectrum of the electron 𝐸 𝑛 and its wave functions Ψ 𝐸 (𝑧) are now obtained by finding solutions of a self-consistent system of Schrödinger-Poisson equations:…”

“…for Γ-conduction subband 𝑛 is obtained taking into account (2.1). It provides the approximation of the contribution of all the nanostructure layers [21,22]:…”

Electron-acoustic Phonon Interaction in AlAs/GaAlAs Resonance Tunneling Nanostructures

“…where the effective electron mass averaged over the contributions of all layers of the nanosystem is determined as [5] ( , ) ( )…”

“…The interaction of electrons with optical phonons in such nanosystems is studied quite well [5,6]. However, in the case of acoustic phonons, this direction remains poorly studied.…”