The effect of indium an the electronic properties of arsenic triselenide

Abstract

A preliminary investigation of the effects of doping arsenic triselenide with indium was carried out. Measurements of DC conductivity, photomobility and optical absorption were performed. We find a significant improvement in the main transport properties. The findings are explained in terms of a shift of the valence band edge towards the centre of the mobility gap as a function of doping rather than a shift of the Fermi level towards the band edge.

Electrical conductivity and relaxation of Se–S–In glasses

“…The incorporation of <10% of sulfur is found to decrease the activation energy of a-Se, a result has been attributed to the shifting of the Fermi level [7]. It has been suggested that incorporation of indium would lead to a reduction in the density of D − defects for negative-U eff systems [17]. This variation may account for the increase in the activation energy of the ternary system Se-S-In.…”

“…In similar studies [17,[19][20][21], the effect of indium incorporation has been interpreted as a result of increasing charge carrier concentration. Consequently, their mobility must increase where the carriers can move easily in the conduction pathways.…”