Abstract:The effects of various kinds of inorganic salts upon the physical properties of silica gel heated in the range up to 1200°C were studied. We measured the polymorphic behavior by means of X-ray diffraction, the simultaneous measurement of the differential thermal analysis, and the thermogravimetric analysis, and the specific surface area by means of the BET N2 method and by means of studying the water-adsorption capacity. The cationic impurities which were found to have strong effects upon the physical properti… Show more
“…Crystallization rates for 100 h at 1000°C and 10 h at 1100°C are comparable to some rates found in the literature, albeit with more tridymite formation than cristobalite . Presence of impurities, particularly sodium, is often suggested to promote tridymite crystallization over that of cristobalite, but the literature is inconsistent on this; some studies are ambiguous or suggest that sodium promotes cristobalite crystallization . Both higher and much lower crystallization temperatures were reported for oxide scales formed on a single crystal and CVD (β) SiC.…”
Section: Resultssupporting
confidence: 68%
“…3,72 Presence of impurities, particularly sodium, is often suggested to promote tridymite crystallization over that of cristobalite, 3,5,11,73 but the literature is inconsistent on this; some studies are ambiguous or suggest that sodium promotes cristobalite crystallization. [74][75][76] Both higher 21 and much lower 20 crystallization temperatures were reported for oxide scales formed on a single crystal and CVD (b) SiC. Neither study reported the type of furnace tube that was used, or other details helpful in assessment of the possible role of impurities.…”
The oxidation and scale crystallization kinetics of Hi‐NicalonTM‐S SiC fibers were measured after oxidation in dry air between 700° and 1400°C. Scale thickness, composition, and crystallization were characterized by TEM with EDS, supplemented by SEM and optical microscopy. TEM was used to distinguish oxidation kinetics of amorphous and crystalline scales. Oxidation initially produces an amorphous silica scale that incorporates some carbon. Growth kinetics of the amorphous scale was analyzed using the flat‐plate Deal‐Grove model. The activation energy for parabolic oxidation was 248 kJ/mol. The scales crystallized to tridymite and cristobalite, starting at 1000°C in under 100 h and 1300°C in under 1 h. Crystallization kinetics had activation energy of 514 kJ/mol with a time growth exponent of 1.5. Crystalline silica nucleated at the scale surface, with more rapid growth parallel to the surface. Crystalline scales cracked from thermal residual stress and phase transformations during cool‐down, and during oxidation from tensile hoop growth stress. High growth shear stress was inferred to cause intense dislocation plasticity near the crystalline SiO2–SiC interphase. Crystalline scales were thinner than amorphous scales, except where growth cracks allowed much more rapid oxidation.
“…Crystallization rates for 100 h at 1000°C and 10 h at 1100°C are comparable to some rates found in the literature, albeit with more tridymite formation than cristobalite . Presence of impurities, particularly sodium, is often suggested to promote tridymite crystallization over that of cristobalite, but the literature is inconsistent on this; some studies are ambiguous or suggest that sodium promotes cristobalite crystallization . Both higher and much lower crystallization temperatures were reported for oxide scales formed on a single crystal and CVD (β) SiC.…”
Section: Resultssupporting
confidence: 68%
“…3,72 Presence of impurities, particularly sodium, is often suggested to promote tridymite crystallization over that of cristobalite, 3,5,11,73 but the literature is inconsistent on this; some studies are ambiguous or suggest that sodium promotes cristobalite crystallization. [74][75][76] Both higher 21 and much lower 20 crystallization temperatures were reported for oxide scales formed on a single crystal and CVD (b) SiC. Neither study reported the type of furnace tube that was used, or other details helpful in assessment of the possible role of impurities.…”
The oxidation and scale crystallization kinetics of Hi‐NicalonTM‐S SiC fibers were measured after oxidation in dry air between 700° and 1400°C. Scale thickness, composition, and crystallization were characterized by TEM with EDS, supplemented by SEM and optical microscopy. TEM was used to distinguish oxidation kinetics of amorphous and crystalline scales. Oxidation initially produces an amorphous silica scale that incorporates some carbon. Growth kinetics of the amorphous scale was analyzed using the flat‐plate Deal‐Grove model. The activation energy for parabolic oxidation was 248 kJ/mol. The scales crystallized to tridymite and cristobalite, starting at 1000°C in under 100 h and 1300°C in under 1 h. Crystallization kinetics had activation energy of 514 kJ/mol with a time growth exponent of 1.5. Crystalline silica nucleated at the scale surface, with more rapid growth parallel to the surface. Crystalline scales cracked from thermal residual stress and phase transformations during cool‐down, and during oxidation from tensile hoop growth stress. High growth shear stress was inferred to cause intense dislocation plasticity near the crystalline SiO2–SiC interphase. Crystalline scales were thinner than amorphous scales, except where growth cracks allowed much more rapid oxidation.
“…The available literature data show that the change in silica structure from the amorphous to the crystal state occurs at a temperature of 1000 • C [9][10][11]. Kondo et al [9,10] studied the influence of impurities and pH of the solution on the structure change of thermally treated silica gel.…”
Section: Resultsmentioning
confidence: 99%
“…Kondo et al [9,10] studied the influence of impurities and pH of the solution on the structure change of thermally treated silica gel. They concluded that the amorphous to crystal structure change depends on the type and concentration of cations and is independent of the type of anions present as impurities.…”
“…The cross-section TEM micrograph of S-500O1000N sample ͓Fig. 30,31 No crystalline features have been observed by the selected area electron diffraction analysis in agreement with the GIXRD pattern ͓Fig.…”
Silica films (amorphous and crystalline) doped with erbium were fabricated on silica glass substrate and characterized. The inorganic-organic hybrid sol-gel method was used to prepare the films and the Na codoping induced the crystallization of silica film. Photoluminescence (L) measurements revealed that the Er3+ ions can be excited from the ground state through an energy transfer process mediated by active defective sites in SiO2 film matrix. The annealing temperature and atmospheres have large effects on the local environment of Er3+ and the 1.54 mu m PL intensity can be improved significantly by suitable heating treatments. We could correlate Er3+ sensitization effect due to the presence of carbon related species in the films. The PL intensity at nonresonant (476.5 nm) condition can be made as intense as the resonant (488 nm) one, for particular annealing conditions. Noticeable changes in PL emission intensities have not been observed whether the matrix silica film is amorphous or crystalline in nature; however, the defect-related luminescence is almost vanished in case of crystalline silica films
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