2017
DOI: 10.1007/s11433-017-9015-0
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The effect of hydrogen on the recombination of Frenkel pair in tungsten: A theoretical insight

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Cited by 9 publications
(5 citation statements)
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“…The formation energy of the monovacancy under strain can be expressed as where is the total energy of the strained system containing N W atoms and vacancies. According to our calculations, the vacancy formation energy in strain-free W is 3.11 eV, consistent with the previous studies [ 24 , 51 , 52 ]. Figure 1 shows the formation energy of a monovacancy in strained W. Under both hydrostatic and biaxial strain, the formation energy of a monovacancy increases with the increasing of tensile strain, while it decreases with the increasing of compressive strain.…”
Section: Resultssupporting
confidence: 92%
“…The formation energy of the monovacancy under strain can be expressed as where is the total energy of the strained system containing N W atoms and vacancies. According to our calculations, the vacancy formation energy in strain-free W is 3.11 eV, consistent with the previous studies [ 24 , 51 , 52 ]. Figure 1 shows the formation energy of a monovacancy in strained W. Under both hydrostatic and biaxial strain, the formation energy of a monovacancy increases with the increasing of tensile strain, while it decreases with the increasing of compressive strain.…”
Section: Resultssupporting
confidence: 92%
“…rhenium (Re) and osmium (Os) are all produced under the real irradiation conditions. These elements can significantly affect the microstructure evolution of defects and complicate the defect-GB interaction processes/mechanisms described here [46][47][48][49][50][51][52][53][54][55]. First-principles calculations by Zhou et al [46] suggest that it is energetically and kinetically favorable for the W GB of Σ5(3 1 0)/[0 0 1] to trap H coming from the bulk.…”
Section: Effects Of the H/he And Alloying Elements On The Healing Promentioning
confidence: 96%
“…The H-GB binding energy is as much as 1.11 eV, while the migration barrier of 0.13-0.16 eV is very low near the GB. In addition, H could also bind with the bulk SIA n prior to its segregation to the GB with the SIA-H binding energy (~ 0.43 eV [47]) as the energetic driving force. Consequently, the segregation of the SIA n may be suppressed to a certain extent by H, which may enhance the annihilation of bulk SIA n -V. H/He also prefers to bind with the V and small V n to form stable complexes [48], which may hinder the segregation of the V. Furthermore, the interplay among the SIA n and H/He as well as the V within the GB can inevitably affect the healing efficiency of the mechanism reviewed in the present paper.…”
Section: Effects Of the H/he And Alloying Elements On The Healing Promentioning
confidence: 99%
“…H and He also induced pronounced synergistic effects in the samples under triple ion irradiation. Previous studies have reported the inhibition of vacancies-interstitials recombination by He [32] and H [33] alone. During triple ion irradiation, H, He, and displacement cascades induced by heavy ions coexist in a relatively small region.…”
Section: Discussionmentioning
confidence: 98%