The effect of high-resistance SnO[sub 2] on CdS/CdTe device performance

Li, X.; Ribelin, R.; Mahathongdy, Yoxa; Albin, David S.; Dhere, R.; Rose, Doug; Asher, S. E.; Moutinho, Helio; Sheldon, P.

doi:10.1063/1.57900

Cited by 17 publications

(7 citation statements)

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“…For CuInSe 2 -and CdTe-based solar cells, buffer layers have been used in production of PV modules [4]. Here, the TCO bilayer with the resistive surface allows thinning and even elimination of the CdS heterojunction emitter layer without a loss of V OC [5,6]. We note that the concept of using a TCO bilayer can often be beneficial for solar cells made from materials with completely different chemistries.…”

Section: Use Of Tco Bilayer With High Surface Resistivitymentioning

confidence: 99%

Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

Roedern

Bauer

1999

MRS Proc.

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This paper discusses material requirements for junction layers needed to obtain solar cells with highest possible open-circuit voltages (V OC ). In a typical a-Si:H-based "p/i/n" solar cell, this includes the transparent conductive oxide (TCO) contact layer, the p-layer, a "buffer layer" inserted at the p/i interface, and the surface portion of the intrinsic layer. In HIT-cells, the i-layer between (n-type) c-Si and (p-type) a-Si:H may be regarded as the buffer. Our suggestion to obtain high values of V OC relies on using materials with high lifetimes and low carrier mobilities that are capable of reducing surface or junction recombination by reducing the flow of carriers into this loss-pathway. We provide a general calculation that supports these approaches and can explain why these schemes are beneficial for all solar cells.

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Section: Use Of Tco Bilayer With High Surface Resistivitymentioning

confidence: 99%

Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

Roedern

Bauer

1999

MRS Proc.

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“…Blue conversion losses can be reduced by decreasing the thickness of the CdS window layer; when too thin, the open‐circuit voltage and fill factor are reduced . The minimum CdS thickness required for optimum cell efficiency can be reduced via addition of a high‐resistance transparent (HRT) layer between the transparent conducting oxide (TCO) and window layer. This effect has been optimized using an SnO 2 ‐based material that can be deposited in a float glass manufacturing line .…”

Section: Introductionmentioning

confidence: 99%

Optimization of CdTe thin‐film solar cell efficiency using a sputtered, oxygenated CdS window layer

Kephart

Geisthardt

Sampath

2015

Progress in Photovoltaics

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A major source of loss in cadmium sulfide/cadmium telluride (CdS/CdTe) solar cells results from light absorbed in the CdS window layer, which is not converted to electrical current. This film can be made more transparent by oxygen incorporation during sputter deposition at ambient temperature. Prior to this work, this material has not produced high-efficiency devices on tin oxide-coated soda-lime-glass substrates used industrially. Numerous devices were fabricated over a variety of process conditions to produce an optimized device. Although the material does not show a consistent increase in band gap with oxygenation, absorption in this layer can be virtually eliminated over the relevant spectrum, leading to an increase in short-circuit current. Meanwhile, fill factor is maintained, and open-circuit voltage increases relative to baseline devices with sublimated CdS. The trend of device parameters with oxygenation and thickness is consistent with an increasing conduction band offset at the window/CdTe interface. Optimization considering both initial efficiency and stability resulted in a National Renewable Energy Laboratory verified 15.2%-efficient cell on 3.2-mm soda-lime glass. This window material was shown to be compatible with SnO 2 -based transparent conducting oxide and high resistance transparent coated substrates using in-line compatible processes.

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“…In the case of amorphous silicon solar cells, SnO 2 films with a high degree of surface texture are necessary to enhance the device performance through light trapping. In the case of CdS/CdTe solar cells, SnO 2 films with minimum roughness are essential to allow the thinnest CdS layers for optimal device performance (1). The deposition conditions must be adjusted to optimize the properties of SnO 2 films for each type of application.…”

Section: Introductionmentioning

confidence: 99%

Characterization of SnO[sub 2] films prepared using tin tetrachloride and tetra methyl tin precursors

Dhere¹,

Moutinho²,

Asher³

et al. 1999

AIP Conference Proceedings

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We have investigated the effect of deposition conditions of SnO 2 films, deposited by chemical vapor deposition using tin tetrachloride and tetramethyltin precursors, on the film properties. The type of precursor and the deposition temperature affect the morphology of the films. The structure of the films is determined by the deposition temperature: films deposited at low temperatures show a mixed SnO and SnO 2 phase. The processing temperature and type of substrate determine the impurity content in the films. Electrical properties (e.g. the carrier mobility) and optical properties of the films are affected by the structure and the impurity content in these layers.

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The effect of high-resistance SnO[sub 2] on CdS/CdTe device performance

Cited by 17 publications

References 0 publications

Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

Optimization of CdTe thin‐film solar cell efficiency using a sputtered, oxygenated CdS window layer

Characterization of SnO[sub 2] films prepared using tin tetrachloride and tetra methyl tin precursors

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