The effect of foreign ions upon the electrical characteristics of anodic ZrO2 films

Quantum conductors formation and resistive switching memory effects in zirconia nanotubes

“…In the case of the geometry of a flat capacitor, we obtain the relative permittivity of ε=20 ± 2. This value is quite consistent with ε=14-40 for continuous thin zirconium films [30,68,69] and coincides with the estimate of ε=21 for an anodized ZrO 2 layer synthesized in a galvanostatic mode at room temperature in an electrolyte of ammonium tetraborate [70].…”

“…It is important to note that, in a number of independent works, both theory and experiment confirm a high concentration of V O in various anodized oxides [42,70,[73][74][75][76]. For example, when treated at a temperature of 500°C for 4 h in a reducing atmosphere of 5% H 2 /N 2 , TiO 2 nanotubular array increases the concentration of active surface defects, with the charge carrier density becoming equal to 9.86•10 20 cm -3 [75].…”

Sunlight activated anodic freestanding ZrO2 nanotube arrays for Cr(VI) photoreduction

“…The as-anodized nanotubes were wellaligned and rather amorphous [11,15,16,26]. Moreover, as the electrochemical anodization process is controlled by ionic migration across the growing oxide, the ZNTs are expected to have significant amount of structural defects [27] and ionic contamination [28]. Here, we also observed that the anodic ZrO 2 film formed was easily detached from the underlying Zr substrate which we concluded due to the presence of K 2 CO 3 in the EG electrolyte.…”