The effect of facets reflectivity on the static characteristics of (DFB) semiconductor laser

Bouchene, Mohammed Mehdi; Hamdi, Rachid

doi:10.1109/cistem.2018.8613390

Cited by 2 publications

(3 citation statements)

References 10 publications

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“…For the forward and backward propagating waves, the boundary condition at the end facets can be given by The output power of the front facet can be obtained by solving the time-domain coupled wave equations using the splitstep method [19]:…”

Section: Simulation Methodsmentioning

confidence: 99%

“…In 2016, Zhao used the TDTW model to analyze the effects of the position of the λ/4-phase shift on the performance of two-section DFB lasers [18], and then a DFB laser with over 30 GHz modulation bandwidth and ∼5 mA threshold current and 0.4 mW mA −1 slope efficiency was demonstrated. In 2018, Bouchene and Hamdi studied the effect of facet reflectivity and the coupling coefficient on the P-I characteristics of index-coupled DFB lasers using the TDTW model [19]. The threshold current was 8.1 mA and the slope efficiency was 0.36 mW mA −1 .…”

Section: Introductionmentioning

confidence: 99%

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Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Ming¹,

Wang²,

Liu³

et al. 2023

Laser Phys.

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This paper proposes an optimization method combining the time-domain traveling wave model and the mode refractive index method, employed for characterizing both the transverse and longitudinal modes of quantum dot distributed feedback (DFB) lasers grown on Si. We use this method to optimize the overall performance of the Si-based DFB laser, and determine the material and chip structural parameters, including the ridge width, etching depth, grating thickness and grating position as optimization parameters. Here, the optimal DFB laser operating under fundamental transverse and single longitudinal mode is obtained. Its threshold current is as low as 5 mA, the slope efficiency is as high as 0.77 mW mA−1, and the side mode suppression ratio is up to 48 dB. When the injection current is 150 mA, the output power exceeds 100 mW. The corresponding ridge width, etching depth and grating thickness are 2 μm, 1.3 μm and 20 nm, respectively. The distance from the grating to the active region is 200 nm. Therefore, the novel method presented in this paper offers an effective scheme for the design of DFB lasers grown on Si with excellent performance.

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Section: Simulation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Ming¹,

Wang²,

Liu³

et al. 2023

Laser Phys.

View full text Add to dashboard Cite

show abstract

“…4(c), remains about the same as Rf = 30% though the smaller reflection case will provide a slightly higher SMSR. It is expected that, with a much larger reflection, the SMY will be degraded due to the fact that the strong feedback effect will affect the threshold condition of the lasing modes and can cause self-pulsation and mode beating [48]. With a larger tolerance on  and Rf, the use of PCG in a PFL allows more flexible design parameters for realizing high-speed DMLs.…”

Section: Comparisons Between Ug-pfl and Pcg-pflmentioning

confidence: 99%

Improvement on Direct Modulation Responses and Stability by Partially Corrugated Gratings Based DFB Lasers With Passive Feedback

2021

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DFB lasers with ultrashort cavities or integrated DFB lasers with passive waveguide reflectors are frequently proposed to realize directly modulated lasers (DMLs) for carrying ultrahigh data rate signals. The former suffers from poor heatsink and laser cleavage yield, while the single-mode stability of the latter scheme is seldom addressed. The mode selection and device performance of a DFB laser is well known to be very sensitive to the facet reflection and external optical feedback. The DFB lasers with partial corrugated gratings and passive feedback (PCG-PFL) are proposed here to overcome the challenging issues for the aforementioned two schemes. With PCG structure, the DFB lasers can maintain high single-mode yield (SMY) even with a high-reflection-coating on the rear facet and strong reflection from the integrated passive section. This provides the robustness in applying the integrated passive reflector to reshape the modulation response or to enhance the 3-dB bandwidth by using the photon-photon resonance (PPR) effect. By designing the PCG-PFL to have 150-m long laser section, 50-m long passive section, and 30% front-facet reflectivity, it can have about 86% of SMY, reduced resonant peak in the intensity modulation response, and reduced waveform overshoot and undershoot for transmitting 56-Gbaud/s PAM-4 signals. By using a longer passive reflector, enhanced bandwidth can be achieved by the PPR effect.

show abstract

The effect of facets reflectivity on the static characteristics of (DFB) semiconductor laser

Cited by 2 publications

References 10 publications

Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Improvement on Direct Modulation Responses and Stability by Partially Corrugated Gratings Based DFB Lasers With Passive Feedback

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