2022
DOI: 10.1016/j.heliyon.2022.e09475
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The effect of electron dose on positive polymethyl methacrylate resist for nanolithography of gold bowtie nanoantennas

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(1 citation statement)
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“…Electron beam lithography (EBL) was used to create a test structure with various dose from 250-350 𝜇C/cm 2 with voltage 30 kV, beam intensity 8 W/cm 2 , beam current 0.142 nA, spot size 2.6 nm and write field 300 𝜇m. When e-beam resist is exposed by electron beam, the electron beam induces the breaking of cross-link within long chain polymer and forms small chain polymer [4][5], then to remove the small chain polymer, the develop process begins i.e., the wafer was soaked in developer MIBK:IPA with ratio 1:3 for 2 minutes then rinsed with RO water. The wafer was coated by gold using evaporation method.…”
Section: Dose Testmentioning
confidence: 99%
“…Electron beam lithography (EBL) was used to create a test structure with various dose from 250-350 𝜇C/cm 2 with voltage 30 kV, beam intensity 8 W/cm 2 , beam current 0.142 nA, spot size 2.6 nm and write field 300 𝜇m. When e-beam resist is exposed by electron beam, the electron beam induces the breaking of cross-link within long chain polymer and forms small chain polymer [4][5], then to remove the small chain polymer, the develop process begins i.e., the wafer was soaked in developer MIBK:IPA with ratio 1:3 for 2 minutes then rinsed with RO water. The wafer was coated by gold using evaporation method.…”
Section: Dose Testmentioning
confidence: 99%