2019
DOI: 10.1016/j.physb.2019.01.026
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The effect of electric field on a fullerene molecule on a metal surface by a nano STM tip

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Cited by 4 publications
(2 citation statements)
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“…In addition, theoretical calculations have shown that defect-free 2D silica can be deformed up to a maximum strain of 10.4%, while for defective samples no abrupt material failure is observed at strains around 7.8-8.1% 63 . Regarding the electric field, by applying bias voltage between the tip of the scanning tunneling microscopy (STM) and the sample, a maximum electric field of 1.7 eV/Å can be obtained 66 . Therefore, both the strain and the electric field used in our calculations are experimentally feasible.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, theoretical calculations have shown that defect-free 2D silica can be deformed up to a maximum strain of 10.4%, while for defective samples no abrupt material failure is observed at strains around 7.8-8.1% 63 . Regarding the electric field, by applying bias voltage between the tip of the scanning tunneling microscopy (STM) and the sample, a maximum electric field of 1.7 eV/Å can be obtained 66 . Therefore, both the strain and the electric field used in our calculations are experimentally feasible.…”
Section: Resultsmentioning
confidence: 99%
“…We determine the threshold to be +3.8 V, where the manipulation occurs because of electronic excitation of a surface state associated with the inserted oxygen. Although increasing the bias voltage increases the tip-sample distance in constant current mode, the electric field still increases [48], which leads to the observed increased manipulation above the voltage threshold [8].…”
Section: Resultsmentioning
confidence: 99%