The Effect of Electric Field on Carrier Mobility in Organic Semiconductors Based on Exponential Type Density of States and Genuine Transport Energy

Xiao-Hong, Shi; Hu, Ming; Yao, Di; Hu, Miaomiao; Dan, Shiyun; Huang, Jin; Zhou, Jihua

doi:10.1109/led.2020.3018547

Cited by 4 publications

(8 citation statements)

References 22 publications

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“…Most of the

probability densities in the previous articles were Gaussian distribution, exponential distribution and their variants [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. However, these models are under the premise that all the states in disordered organic semiconductors are localized [ 7 , 8 ], which is inconsistent with Anderson’s localization theory: in a disordered system, states are only localized in the band tail of DOS, and are extended in the center of the band [ 25 ].…”

Section: Model Theorymentioning

confidence: 99%

“…More importantly, as stated by some researchers, the Gaussian DOS model is only an assumption and may not strictly be true, and the DOS of disordered organic semiconductors cannot be purely exponential at low concentration [ 6 , 7 ]. Therefore, modification of Gaussian DOS and exponential DOS is a common method to deal with the DOS of disordered organic semiconductors, such as introduing a modified parameter, a combination of Gaussian DOS and exponential DOS, and so on [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. In other words, most of the current improved DOS models are developed on the basis of Gaussian DOS and exponential DOS.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Density of States (DOS) for Disordered Organic Semiconductors

Qin

Chen

2023

Micromachines

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In this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is closer to experimental data than traditional DOS. Moreover, we also provide a detailed method to choose the DOS parameter for better use of the proposed DOS. This paper also contains a prediction for the DOS parameters, and it has been verified by the experimental data. More importantly, the physical meaning of the proposed DOS parameter has been explained by equilibrium energy theory and transport energy theory to make this proposed model more rational. Compared with the improved DOS based on Gaussian and exponential DOS, this work is a new attempt to combine probabilistic theory with physical theory related to DOS in disordered organic semiconductors, showing great significance for the further investigation of the properties of DOS.

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“…Most of the

Section: Model Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Novel Density of States (DOS) for Disordered Organic Semiconductors

Qin

Chen

2023

Micromachines

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“…To calculate the conductivity, based on the common Miller–brahams hopping model [ 21 , 35 ] one can obtain the average hopping rate

at which carriers transition from energy E to a different energy. It is given by the sum of the average downward (

) and upward (

) hopping rates [ 25 ]:

where

is the attempt-to-jump frequency (

is the inverse localization radius,

is the average distance carriers at energy E and it is expressed as

[ 13 ]. Here, the percolation threshold parameter

.…”

Section: Model Theorymentioning

confidence: 99%

“…Considering the diversity of organic semiconductor structures and the limitations of GDM at high concentration, various improved DOS models have been proposed and used to make up for the disadvantages of GDM, such as exponential DOS, DOS based on free probability approximation, etc. [ 12 , 13 , 14 , 15 , 16 ]. In addition, doping, as a common means to improve the performance of organic thermoelectric materials, will also change the DOS and the band gap of organic semiconductors [ 17 , 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor

Qin

Chen

2023

Micromachines

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In this work, a unified method is proposed for analyzing the relationship between the Seebeck coefficient and the energy disorder of organic semiconductors at any multi-parameter density of states (DOS) to study carrier transport in disordered thermoelectric organic semiconductors and the physical meaning of improved DOS parameters. By introducing the Gibbs entropy, a new multi-parameter DOS and traditional Gaussian DOS are used to verify this method, and the simulated result of this method can well fit the experiment data obtained on three organic devices. In particular, the impact of DOS parameters on the Gibbs entropy can also influence the impact of the energy disorder on the Seebeck coefficient.

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“…where μ 0 is the zero-field mobility, and α is a constant related to the energetic disorder of the organic layer [27].…”

mentioning

confidence: 99%

Effect of source and drain electrode positions on the performance of bottom gate organic thin film transistor

Rathod,

Dubey,

Gowri

et al. 2024

Eng. Res. Express

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In recent years several novel technologies have emerged on commercial level. Organic electronics is one such technology that has created new avenues for the development of flexible, robust, and cost-effective electronic devices. Transistor developed using organic materials are called organic thin film transistors (OTFT). Transistor is elementary component of any electronic device, any variation in the size or performance of the transistors reflects directly on the overall performance of the electronic devices. Bottom gate bottom contact (BGBC) OTFT is commonly used single gate organic transistor owing to its simple architecture and easy fabrications. But due to low mobility of charge carriers in organic semiconductor material its overall performance declines. As a result, its application in electronic circuits becomes limited. Therefore, to enhance the performance of BGBC OTFT and facilitate the optimal mobilisation of charge carriers in organic semiconductor layer, improvement in the architecture of BGBC is deemed necessary. In this research article the performance of BGBC OTFT is analysed for different positions of source and drain electrodes embedded inside organic semiconductor (OSC) layer. The study signifies the effect of electrode positions on performance optimization of BGBC OTFT without changing the materials, dimensions, or the operating voltage regime organic. It has been found that for 30 nm thick OSC layer, the electrodes should ideally be paced between 5 nm to 10 nm above the dielectric inside OSC layer for optimal results.

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The Effect of Electric Field on Carrier Mobility in Organic Semiconductors Based on Exponential Type Density of States and Genuine Transport Energy

Cited by 4 publications

References 22 publications

A Novel Density of States (DOS) for Disordered Organic Semiconductors

A Novel Density of States (DOS) for Disordered Organic Semiconductors

A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor

Effect of source and drain electrode positions on the performance of bottom gate organic thin film transistor

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